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SQP50N06-09L_GE3

P1-P3P4-P6P7-P8
SQP50N06-09L
www.vishay.com
Vishay Siliconix
S12-1867-Rev. A, 13-Aug-12
1
Document Number: 62664
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
•TrenchFET
®
Power MOSFET
•100 % R
g
and UIS Tested
• AEC-Q101 Qualified
d
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
() at V
GS
= 10 V 0.009
R
DS(on)
() at V
GS
= 4.5 V 0.013
I
D
(A) 50
Configuration Single
D
G
S
N-Channel MOSFET
TO-220
Top View
GDS
ORDERING INFORMATION
Package TO-220
Lead (Pb)-free and Halogen-free SQP50N06-09L-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
a
I
D
50
A
T
C
= 125 °C 49
Continuous Source Current (Diode Conduction)
a
I
S
50
Pulsed Drain Current
b
I
DM
200
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
48
Single Pulse Avalanche Energy E
AS
115 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
136
W
T
C
= 125 °C 45
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
50
°C/W
Junction-to-Case (Drain) R
thJC
1.1
SQP50N06-09L
www.vishay.com
Vishay Siliconix
S12-1867-Rev. A, 13-Aug-12
2
Document Number: 62664
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 60 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 2.0 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 60 V - - 1
μA V
GS
= 0 V V
DS
= 60 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 60 V, T
J
= 175 °C - - 250
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 50 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 20 A - 0.0071 0.0090
V
GS
= 10 V I
D
= 20 A, T
J
= 125 °C - - 0.0160
V
GS
= 10 V I
D
= 20 A, T
J
= 175 °C - - 0.0190
V
GS
= 4.5 V I
D
= 10 A - 0.0094 0.0130
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A - 62 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 2451 3065
pF Output Capacitance C
oss
- 435 545
Reverse Transfer Capacitance C
rss
- 192 240
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 30 V, I
D
= 50 A
-4872
nC Gate-Source Charge
c
Q
gs
-7.1-
Gate-Drain Charge
c
Q
gd
- 13.5 -
Gate Resistance R
g
f = 1 MHz 0.85 1.7 2.6
Turn-On Delay Time
c
t
d(on)
V
DD
= 30 V, R
L
= 0.6
I
D
50 A, V
GEN
= 10 V, R
g
= 1
-1015
ns
Rise Time
c
t
r
-1117
Turn-Off Delay Time
c
t
d(off)
-2741
Fall Time
c
t
f
-812
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
- - 200 A
Forward Voltage V
SD
I
F
= 20 A, V
GS
= 0 V - 0.82 1.5 V
SQP50N06-09L
www.vishay.com
Vishay Siliconix
S12-1867-Rev. A, 13-Aug-12
3
Document Number: 62664
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
20
40
60
80
100
048121620
V
GS
=10Vthru5V
V
GS
=2V
V
GS
=4V
V
GS
=3V
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
0
2
4
6
8
10
012345
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
0
0.005
0.010
0.015
0.020
0.025
0 20406080100
V
GS
=4.5V
V
GS
=10V
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
0
20
40
60
80
100
0246810
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
0
20
40
60
80
100
120
0 1020304050
I
D
- Drain Current (A)
- Transconductance (S)
g
fs
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
C
rss
0
1000
2000
3000
4000
0 102030405060
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
P1-P3P4-P6P7-P8

SQP50N06-09L_GE3

Mfr. #:
Buy SQP50N06-09L_GE3
Manufacturer:
Vishay
Description:
MOSFET N-CH 60V 50A TO220AB
Lifecycle:
New from this manufacturer.
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