MB3035S-E3/4W

M30x5S, MB30x5S, MI30x5S
www.vishay.com
Vishay General Semiconductor
Revision: 13-Aug-13
1
Document Number: 88952
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Barrier Rectifier
FEATURES
Power pack
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s per
JESD22-B106 (for TO-220AB and TO-262AA package)
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
30 A
V
RRM
35 V, 45 V
I
FSM
200 A
V
F
at I
F
= 30 A 0.61 V
T
J
max. 150 °C
Package
TO-220AB, TO-263AB,
TO-262AA
Diode variations Single
1
K
2
3
TO-263AB
NC
A
K
TO-262AA
TO-220AB
1
2
3
M30xxS
PIN 1
PIN 2
CASE
PIN 3
MI30xxSMB30xxS
HEATSINK
NC
A
K
K
PIN 1
PIN 3
PIN 2
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL M(B,I)3035S M(B,I)3045S UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 V
Maximum average forward rectified current (fig.1) I
F(AV)
30 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
200
A
Peak repetitive reverse current at t
p
= 2.0 μs, 1 kHz I
RRM
2.0
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range
T
J
- 65 to + 150
°C
T
STG
- 65 to + 175
M30x5S, MB30x5S, MI30x5S
www.vishay.com
Vishay General Semiconductor
Revision: 13-Aug-13
2
Document Number: 88952
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNIT
Maximum instantaneous forward voltage
V
F
(1)
I
F
= 15 A
T
J
= 25 °C
0.54 -
V
I
F
= 30 A 0.65 0.70
I
F
= 15 A
T
J
= 125 °C
0.46 -
I
F
= 30 A 0.61 0.66
Maximum instantaneous reverse current at DC
blocking voltage
I
R
(2)
Rated V
R
T
J
= 25 °C 40 200 μA
T
J
= 125 °C 26 55 mA
Typical junction capacitance C
J
4.0 V, 1 MHz 980 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL M30xxS MB30xxS MI30xxS UNIT
Typical thermal resistance R
JC
2.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB M3045S-E3/4W 1.878 4W 50/tube Tube
TO-263AB MB3045S-E3/4W 1.37 4W 50/tube Tube
TO-263AB MB3045S-E3/8W 1.37 8W 800/reel Tape and reel
TO-263AA MI3045S-E3/4W 1.454 4W 50/tube Tube
Case Temperature (°C)
35
15
0
075150
Average Forward Current (A)
25
25 100
5
50 125
10
M30xxS
M(B,I)30xxS
30
20
Number of Cycles at 60 Hz
300
150
0
1100
Peak Forward Surge Current (A)
200
10
50
100
250
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
M30x5S, MB30x5S, MI30x5S
www.vishay.com
Vishay General Semiconductor
Revision: 13-Aug-13
3
Document Number: 88952
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
Fig. 7 - Typical Transient Thermal Impedance
Instantaneous Forward Voltage (V)
100
0.1
0.01
00.9
Instantaneous Forward Current (A)
1
0.1
10
0.80.70.60.50.40.30.2
Pulse Width = 300 µs
1 % Duty Cycle
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
1000
0.1
0.001
10 100
Instantaneous Reverse Current (mA)
1
20
10
90807060504030
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.01
100
Reverse Voltage (V)
10 000
100
0.1 100
Junction Capacitance (pF)
110
1000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
t - Pulse Duration (s)
10
0.1
0.01 100
Transient Thermal Impedance (°C/W)
110
1
0.1
Junction to Case
M(I)30xxS
t - Pulse Duration (s)
10
0.1
0.01 100
Transient Thermal Impedance (°C/W)
110
1
0.1
Junction to Case
MB30xxS

MB3035S-E3/4W

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Bridge Rectifiers RECOMMENDED ALT 78-SX081H150A6OU
Lifecycle:
New from this manufacturer.
Delivery:
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