FMMT459TC

FMMT459
Document number: DS33089 Rev. 7 - 2
4 of 7
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March 2014
© Diodes Incorporated
FMMT459
A
Product Line o
f
Diodes Incorporated
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
500 700 V
I
C
= 100µA
Collector-Emitter Breakdown Voltage
BV
CEV
500 700 V
I
C
= 10µA; 0.3V > V
BE
> -1V
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
450 500 V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
7 8.1 V
I
E
= 100µA
Emitter-Base Breakdown Voltage (Reverse Blocking)
BV
ECV
6 8.1 V
I
C
= 1µA; 0.3V > V
BC
> -6V
Collector Cutoff Current
I
CBO
— <10 100 nA
V
CB
= 450V
Emitter Cutoff Current
I
EBO
— <10 100 nA
V
EB
= 5.6V
Collector Emitter Cutoff Current
I
CES
— <10 100 nA
V
CE
= 450V
Static Forward Current Transfer Ratio (Note 9)
h
FE
50
120
70
I
C
= 30mA, V
CE
= 10V
I
C
= 50mA, V
CE
= 10V
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
60
70
75
90
mV
mV
I
C
= 20mA, I
B
= 2mA
I
C
= 50mA, I
B
= 6mA
Base-Emitter Turn-On Voltage (Note 9)
V
BE
(
on
)
— 0.71 0.9 V
I
C
= 50mA, V
CE
= 10V
Base-Emitter Saturation Voltage (Note 9)
V
BE
(
sat
)
— 0.76 0.9 V
I
C
= 50mA, I
B
= 5mA
Output Capacitance
C
obo
— — 5 pF
V
CB
= 20V, f = 1MHz
Transition Frequency
f
T
50 — MHz
V
CE
= 20V, I
C
= 10mA,
f = 20MHz
Turn-On Time
t
on
— 113 — ns
V
C
= 100V, I
C
= 50mA
I
B1
= 5mA, I
B2
= -10mA
Turn-Off Time
t
off
— 3450 — ns
Notes: 9. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
FMMT459
Document number: DS33089 Rev. 7 - 2
5 of 7
www.diodes.com
March 2014
© Diodes Incorporated
FMMT459
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Typical Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
1m 10m 100m
10m
100m
1
1m 10m 100m
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
1m 10m 100m
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1m 10m 100m
0.4
0.6
0.8
1.0
1m 10m 100m
0.4
0.6
0.8
1.0
0
30
60
90
120
150
180
210
V
CE(SAT)
v I
C
Tamb=25°C
I
C
/I
B
=50
I
C
/I
B
=20
I
C
/I
B
=10
V
CE(SAT)
(V)
I
C
Collector Current (A)
V
BE(SAT)
v I
C
I
C
/I
B
=20
100°C
25°C
-55°C
V
CE(SAT)
(V)
I
C
Collector Current (A)
h
FE
v I
C
V
CE
=10V
-55°C
25°C
100°C
Normalised Gain
I
C
Collector Current (A)
25°C
V
CE(SAT)
v I
C
I
C
/I
B
=20
100°C
-55°C
V
BE(SAT)
(V)
I
C
Collector Current (A)
V
BE(ON)
v I
C
V
CE
=10V
100°C
25°C
-55°C
V
BE(ON)
(V)
I
C
Collector Current (A)
Typical Gain (h
FE
)
FMMT459
Document number: DS33089 Rev. 7 - 2
6 of 7
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March 2014
© Diodes Incorporated
FMMT459
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between
device Terminals and PCB tracking.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
a
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C
2.0
E
1.35
X
E
Y
C
Z

FMMT459TC

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN Hi-V Sw 500V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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