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NLU1GT14CMX1TCG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 5
1 Publication Order Number:
NLU1GT14/D
NLU1GT14
Single Schmitt-Trigger
Inverter, TTL Level
LSTTL−Compatible Inputs
The NLU1GT14 MiniGatet is an advanced high−speed CMOS
Schmitt−trigger inverter in ultra−small footprint.
The device input is compatible with TTL−type input thresholds and
the output has a full 5 V CMOS level output swing.
The NLU1GT14 input and output structures provide protection
when voltages up to 7 V are applied, regardless of the supply voltage.
The NLU1GT14 can be used to enhance noise immunity or to
square up slowly changing waveforms.
Features
• High Speed: t
PD
= 4.5 ns (Typ) @ V
CC
= 5.0 V
• Low Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25°C
• TTL−Compatible Input: V
IL
= 0.8 V; V
IH
= 2.0 V
• CMOS−Compatible Output:
V
OH
> 0.8 V
CC
; V
OL
< 0.1 V
CC
@ Load
• Power Down Protection Provided on inputs
• Balanced Propagation Delays
• Overvoltage Tolerant (OVT) Input and Output Pins
• Ultra−Small Packages
• These are Pb−Free Devices
IN A
OUT Y
1
V
CC
NC
IN A
OUT YGND
1
2
3
5
4
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
6
NC
FUNCTION TABLE
L
H
AY
H
L
PIN ASSIGNMENT
1
2
3 GND
NC
IN A
4
5NC
OUT Y
6V
CC
MARKING
DIAGRAMS
M = Device Marking
M = Date Code
www.onsemi.com
See detailed ordering and shipping information on page 4 of
this data sheet.
ORDERING INFORMATION
MM
1
UDFN6
MU SUFFIX
CASE 517AA
UDFN6
1.45 x 1.0
CASE 517AQ
UDFN6
1.0 x 1.0
CASE 517BX
1
Q M
1
T M
NLU1GT14
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2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage −0.5 to +7.0 V
I
IK
DC Input Diode Current V
IN
< GND −20 mA
I
OK
DC Output Diode Current V
OUT
< GND ±20 mA
I
O
DC Output Source/Sink Current ±12.5 mA
I
CC
DC Supply Current Per Supply Pin ±25 mA
I
GND
DC Ground Current per Ground Pin ±25 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias 150 °C
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 150
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5) ±500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22−A114−A.
3. Tested to EIA / JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Positive DC Supply Voltage 1.65 5.5 V
V
IN
Digital Input Voltage 0 5.5 V
V
OUT
Output Voltage 0 5.5 V
T
A
Operating Free−Air Temperature −55 +125 °C
Dt/DV
Input Transition Rise or Fall Rate V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
0
0
No Limit
No Limit
ns/V
NLU1GT14
www.onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions
V
CC
(V)
T
A
= 25 5C T
A
= +855C
T
A
= −555C
to +1255C
Unit
Min Typ Max Min Max Min Max
V
T+
Positive Threshold
Voltage
3.0
4.5
5.5
1.20
1.58
1.79
1.40
1.74
1.94
1.60
2.00
2.10
1.6
2.0
2.0
1.6
2.0
2.0
V
V
T−
Negative Threshold
Voltage
3.0
4.5
5.5
0.35
0.5
0.6
0.76
1.01
1.13
0.93
1.18
1.29
0.35
0.5
0.6
0.35
0.5
0.6
V
V
H
Hysteresis Voltage 3.0
4.5
5.5
0.30
0.40
0.50
0.64
0.73
0.81
1.20
1.40
1.60
0.30
0.40
0.50
1.20
1.40
1.60
0.30
0.40
0.50
1.20
1.40
1.60
V
V
OH
Minimum High−Level
Output Voltage
V
IN
v V
T−MIN
I
OH
= −50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
V
IN
v V
T−MIN
I
OH
= −4 mA
I
OH
= −8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
OL
Maximum Low−Level
Output Voltage
V
IN
w V
T+MAX
I
OL
= 50 mA
2.0
3.0
4.5
0
0
0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
w V
T+MAX
I
OL
= 4 mA
I
OL
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
I
IN
Input Leakage Current 0 v V
IN
v 5.5 V 0 to
5.5
±0.1 ±1.0 ±1.0
mA
I
CC
Quiescent Supply
Current
V
IN
= 5.5 V or
GND
5.5 1.0 20 40
mA
I
CCT
Quiescent Supply
Current
V
IN
= 3.4 V 5.5 1.35 1.50 1.65 mA
I
OPD
Output Leakage Current V
OUT
= 5.5 V 0.0 0.5 5.0 10
mA
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns)
Symbol Parameter
V
CC
(V)
Test
Condition
T
A
= 25 5C T
A
= +855C
T
A
= −555C to
+1255C
Unit
Min Typ Max Min Max Min Max
t
PLH
,
t
PHL
Propagation Delay,
Input A to Output Y
3.0 to
3.6
C
L
= 15 pF 7.0 12.8 1.0 15.0 1.0 17.0
ns
C
L
= 50 pF 8.4 16.3 1.0 18.5 1.0 20.5
4.5 to
5.5
C
L
= 15 pF 4.5 8.6 1.0 10.0 1.0 11.5
C
L
= 50 pF 5.8 10.6 1.0 12.0 1.0 13.5
C
IN
Input Capacitance 5 10 10 10.0 pF
C
PD
Power Dissipation
Capacitance
(Note 6)
5.0 10.0 pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation I
CC(OPR)
= C
PD
• V
CC
• f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption: P
D
= C
PD
• V
CC
2
• f
in
+ I
CC
• V
CC.
P1-P3P4-P6P7-P7

NLU1GT14CMX1TCG

Mfr. #:
Buy NLU1GT14CMX1TCG
Manufacturer:
ON Semiconductor
Description:
Inverters SGL TRIG IVRT SCHMIT TTL LEVEL
Lifecycle:
New from this manufacturer.
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