©2011 Silicon Storage Technology, Inc. DS25078A 11/11
18
2 Mbit SPI Serial Flash
SST25VF020
Not Recommended for New Designs
Microchip Technology Company
Electrical Specifications
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Temperature Under Bias .............................................. -55°C to +125°C
Storage Temperature................................................. -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential .............................-0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ..................-2.0V to V
DD
+2.0V
Package Power Dissipation Capability (Ta = 25°C)................................... 1.0W
Surface Mount Solder Reflow Temperature ...........................260°C for 10 seconds
Output Short Circuit Current
1
................................................... 50mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
Table 7: Operating Range
Range Ambient Temp V
DD
Commercial 0°C to +70°C 2.7-3.6V
Industrial -40°C to +85°C 2.7-3.6V
Extended -20°C to +85°C 2.7-3.6V
T7.1 25078
Table 8: AC Conditions of Test
1
1. See Figures 20 and 21
Input Rise/Fall Time Output Load
5ns C
L
=30pF
T8.1 25078
Table 9: DC Operating Characteristics V
DD
= 2.7-3.6V
Symbol Parameter
Limits
Test ConditionsMin Max Units
I
DDR
Read Current 10 mA CE#=0.1 V
DD
/0.9 V
DD
@20 MHz, SO=open
I
DDW
Program and Erase Current 30 mA CE#=V
DD
I
SB
Standby Current 15 µA CE#=V
DD
,V
IN
=V
DD
or V
SS
I
LI
Input Leakage Current 1 µA V
IN
=GND to V
DD
,V
DD
=V
DD
Max
I
LO
Output Leakage Current 1 µA V
OUT
=GND to V
DD
,V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.8 V V
DD
=V
DD
Min
V
IH
Input High Voltage 0.7 V
DD
VV
DD
=V
DD
Max
V
OL
Output Low Voltage 0.2 V I
OL
=100 µA, V
DD
=V
DD
Min
V
OH
Output High Voltage V
DD
-0.2 V I
OH
=-100 µA, V
DD
=V
DD
Min
T9.0 25078