Product Standards
MOS FET
FM6K62010L
FET (N-ch.)
SBD
Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring
methods for diodes.
Page
VDD = 10 V, VGS = 4 V to 0 V
18
5
17
18
100 150
Turn-on delay time
*1
td(on)
|Yfs| ID = 1.0 A, VDS = 10 V
CrssReverse Transfer Capacitance
0.85 1.30.4
10580
of 6
VDSS ID = 1.0 mA, VGS = 0
20 V
IDSS VDS = 20 V, VGS = 0
280
Parameter
2
Zero Gate Voltage Drain Current
Gate-source Leakage Current IGSS
10
Electrical Characteristics Ta = 25C 3
C
Input Capacitance Ciss
VGS = 8 V, VDS = 0
Gate-source Threshold Voltage Vth ID = 1.0 mA, VDS = 10 V
RDS(on)2
ID = 1.0 A, VGS = 4.0 V
Drain to Source Breakdown Voltage
Output Capacitance Coss
ID = 0.5 A, VGS = 2.5 V
RDS(on)1
Symbol Conditions Min
μA
V
Note: 1.
ID = 1.0 A
Fall time
*1
tf
8
Max UnitTyp
1.0 μA
2.
Turn-off delay time
*1
td(off)
ns
ns
Drain-source On-State Resistance
Forward transfer admittance
m
3.0 S
VDS = 10 V, VGS = 0, f = 1 MHz pF
Rise time
*1
Symbol Conditions Min
VDD = 10 V, VGS = 0 V to 4 V
tr
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Turn-on, Turn-off measurement circuit
20
ID = 1.0 A
Max Unit
Forward voltage
VF1 IF = 800 mA
0.47 V
Parameter
IF = 1.0 A
Typ
0.52 V
Reverse current IR VR = 20 V
80 μA
VF2
