1N5913B Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
L
= 30°C unless otherwise noted, V
F
= 1.5 V Max @ I
F
= 200 mAdc for all types)
Device
†
(Note 1)
Device
Marking
Zener Voltage (Note 2) Zener Impedance (Note 3) Leakage Current
I
ZM
V
Z
(Volts) @ I
ZT
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
I
R
@ V
R
Min Nom Max mA
W W
mA
mA Max
Volts mA
1N5913B, G 1N5913B 3.14 3.3 3.47 113.6 10 500 1 100 1 454
1N5917B, G 1N5917B 4.47 4.7 4.94 79.8 5 500 1 5 1.5 319
1N5919B, G 1N5919B 5.32 5.6 5.88 66.9 2 250 1 5 3 267
1N5920B, G 1N5920B 5.89 6.2 6.51 60.5 2 200 1 5 4 241
1N5921B, G 1N5921B 6.46 6.8 7.14 55.1 2.5 200 1 5 5.2 220
1N5923B, G 1N5923B 7.79 8.2 8.61 45.7 3.5 400 0.5 5 6.5 182
1N5924B, G 1N5924B 8.65 9.1 9.56 41.2 4 500 0.5 5 7 164
1N5925B, G 1N5925B 9.50 10 10.50 37.5 4.5 500 0.25 5 8 150
1N5926B, G 1N5926B 10.45 11 11.55 34.1 5.5 550 0.25 1 8.4 136
1N5927B, G 1N5927B 11.40 12 12.60 31.2 6.5 550 0.25 1 9.1 125
1N5929B, G 1N5929B 14.25 15 15.75 25.0 9 600 0.25 1 11.4 100
1N5930B, G 1N5930B 15.20 16 16.80 23.4 10 600 0.25 1 12.2 93
1N5931B, G 1N5931B 17.10 18 18.90 20.8 12 650 0.25 1 13.7 83
1N5932B, G 1N5932B 19.00 20 21.00 18.7 14 650 0.25 1 15.2 75
1N5933B, G 1N5933B 20.90 22 23.10 17.0 17.5 650 0.25 1 16.7 68
1N5934B, G 1N5934B 22.80 24 25.20 15.6 19 700 0.25 1 18.2 62
1N5935B, G 1N5935B 25.65 27 28.35 13.9 23 700 0.25 1 20.6 55
1N5936B, G 1N5936B 28.50 30 31.50 12.5 28 750 0.25 1 22.8 50
1N5937B, G 1N5937B 31.35 33 34.65 11.4 33 800 0.25 1 25.1 45
1N5938B, G 1N5938B 34.20 36 37.80 10.4 38 850 0.25 1 27.4 41
1N5940B, G 1N5940B 40.85 43 45.15 8.7 53 950 0.25 1 32.7 34
1N5941B, G 1N5941B 44.65 47 49.35 8.0 67 1000 0.25 1 35.8 31
1N5942B, G 1N5942B 48.45 51 53.55 7.3 70 1100 0.25 1 38.8 29
1N5943B, G 1N5943B 53.20 56 58.80 6.7 86 1300 0.25 1 42.6 26
1N5944B, G 1N5944B 58.90 62 65.10 6.0 100 1500 0.25 1 47.1 24
1N5946B, G 1N5946B 71.25 75 78.75 5.0 140 2000 0.25 1 56 20
1N5947B, G 1N5947B 77.90 82 86.10 4.6 160 2500 0.25 1 62.2 18
1N5948B, G 1N5948B 86.45 91 95.55 4.1 200 3000 0.25 1 69.2 16
1N5950B, G 1N5950B 104.5 110 115.5 3.4 300 4000 0.25 1 83.6 13
1N5951B, G 1N5951B 114 120 126 3.1 380 4500 0.25 1 91.2 12
1N5952B, G 1N5952B 123.5 130 136.5 2.9 450 5000 0.25 1 98.8 11
1N5953B, G 1N5953B 142.5 150 157.5 2.5 600 6000 0.25 1 114 10
1N5954B, G 1N5954B 152 160 168 2.3 700 6500 0.25 1 121.6 9
1N5955B, G 1N5955B 171 180 189 2.1 900 7000 0.25 1 136.8 8
1N5956B, G 1N5956B 190 200 210 1.9 1200 8000 0.25 1 152 7
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
†The “G’’ suffix indicates Pb−Free package available.
1. TOLERANCE AND TYPE NUMBER DESIGNATION
Tolerance designation − device tolerance of ±5% are indicated by a “B” suffix.
2. ZENER VOLTAGE (V
Z
) MEASUREMENT
ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (T
L
) at 30°C ±1°C,
3/8″ from the diode body.
3. ZENER IMPEDANCE (Z
Z
) DERIVATION
The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.