1N5953B

1N5913B Series
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4
Figure 1. Power Temperature Derating Curve
T
L
, LEAD TEMPERATURE (°C)
0 20 40 60 20080 100 120 140 160 180
0
1
2
3
4
5
L = 1/8
L = 3/8
L = 1
L = LEAD LENGTH
TO HEAT SINK
P
D
, STEADY STATE DISSIPATION (WATTS)
t, TIME (SECONDS)
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
0.3
0.5
0.7
1
2
3
5
7
10
20
30
D =0.5
0.2
0.1
0.05
0.01
D = 0
DUTY CYCLE, D =t
1
/t
2
θ
JL
(t, D) TRANSIENT THERMAL RESISTANCE
JUNCTION-TO-LEAD ( C/W)°
P
PK
t
1
NOTE: BELOW 0.1 SECOND, THERMAL
RESPONSE CURVE IS APPLICABLE
TO ANY LEAD LENGTH (L).
SINGLE PULSE DT
JL
= q
JL
(t)P
PK
REPETITIVE PULSES DT
JL
= q
JL
(t,D)P
PK
t
2
0.02
10
20
30
50
100
200
300
500
1K
0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100
PW, PULSE WIDTH (ms)
P , PEAK SURGE POWER (WATTS)
PK
1 2 5 10 20 50 100 200 400 1000
0.0003
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
2
3
T
A
= 125°C
T
A
= 125°C
NOMINAL V
Z
(VOLTS)
AS SPECIFIED IN ELEC. CHAR. TABLE
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch
Figure 3. Maximum Surge Power Figure 4. Typical Reverse Leakage
I
R
, REVERSE LEAKAGE (μ Adc) @ V
R
RECTANGULAR
NONREPETITIVE
WAVEFORM
T
J
=25°C PRIOR
TO INITIAL PULSE
1N5913B Series
http://onsemi.com
5
APPLICATION NOTE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, T
L
, should be determined from:
T
L
= q
LA
P
D
+ T
A
q
LA
is the lead-to-ambient thermal resistance (°C/W) and
P
D
is the power dissipation. The value for q
LA
will vary and
depends on the device mounting method. q
LA
is generally
30−40°C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of T
L
, the junction temperature
may be determined by:
T
J
= T
L
+ DT
JL
DT
JL
is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.
DT
JL
= q
JL
P
D
For worst-case design, using expected limits of I
Z
, limits
of P
D
and the extremes of T
J
(DT
J
) may be estimated.
Changes in voltage, V
Z
, can then be found from:
DV = q
VZ
DT
J
q
VZ
, the zener voltage temperature coefficient, is found
from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.
1N5913B Series
http://onsemi.com
6
Figure 5. Units To 12 Volts Figure 6. Units 10 To 400 Volts
Figure 7. V
Z
= 3.3 thru 10 Volts Figure 8. V
Z
= 12 thru 82 Volts
Figure 9. V
Z
= 100 thru 400 Volts Figure 10. Typical Thermal Resistance
ZENER VOLTAGE versus ZENER CURRENT
(Figures 7, 8 and 9)
TEMPERATURE COEFFICIENT RANGES
(90% of the Units are in the Ranges Indicated)
V
Z
, ZENER VOLTAGE @ I
ZT
(VOLTS)
34 5 6 789101112
10
8
6
4
2
0
−2
−4
RANGE
, TEMPERATURE COEFFICIENT (mV/ C) @ I
ZTVZ
°θ
1000
500
200
100
50
20
10
10 20 50 100 200 400 1000
V
Z
, ZENER VOLTAGE @ I
ZT
(VOLTS)
, TEMPERATURE COEFFICIENT (mV/ C) @ I
ZTVZ
°θ
01 2 3 4 56 7 8910
100
50
30
20
10
1
0.5
0.3
0.2
0.1
V
Z
, ZENER VOLTAGE (VOLTS)
I , ZENER CURRENT (mA)
Z
2
5
3
0 10 203040 50 607080 90100
V
Z
, ZENER VOLTAGE (VOLTS)
I , ZENER CURRENT (mA)
Z
100
50
30
20
10
1
0.5
0.3
0.2
0.1
2
5
3
100 200 300 400250 350150
10
1
0.5
0.2
0.1
V
Z
, ZENER VOLTAGE (VOLTS)
2
5
I , ZENER CURRENT (mA)
Z
0
10
20
30
40
50
60
70
80
L, LEAD LENGTH TO HEAT SINK (INCH)
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1
T
L
JL
, JUNCTION-TO-LEAD THERMAL RESISTANCE
θ
LL
( C/W)°

1N5953B

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Zener Diodes Zener Diodes
Lifecycle:
New from this manufacturer.
Delivery:
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