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SFH620AA

P1-P3P4-P6
SFH620AA, SFH620AGB
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 19-Nov-14
1
Document Number: 83676
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, AC Input, 5300 V
RMS
DESCRIPTION
The SFH620AA, SFH620AGB features a high current
transfer ratio, low coupling capacitance and high isolation
voltage. These couplers have a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a plastic
DIP-4 package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead spacing.
This version complies with IEC 60950 (DIN VDE 0805) for
reinforced insulation up to an operation voltage of 400 V
RMS
or DC.
FEATURES
• High current transfer ratios
- at 5 mA: 50 to 600 %
- at 1.0 mA: 45 % typical (> 13)
• Low CTR degradation
• Good CTR linearity depending on forward
current
• Isolation test voltage, 5300 V
RMS
• High collector emitter voltage, V
CEO
= 70 V
• Low saturation voltage
• Fast switching times
• Temperature stable
• Low coupling capacitance
• End stackable, 0.100" (2.54 mm) spacing
• High common mode interference immunity (unconnected
base)
• SMD option, see SFH620A, SFH6206 datasheet
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
AGENCY APPROVALS
• UL1577, file no. E52744 system code H, double protection
• CSA 93751
• BSI IEC 60950; IEC 60065
• VDE 0884-5, DIN EN 60747-5-5, available with option 1
E
CA/C
C/A
1
2
4
3
i179062-1
ORDERING INFORMATION
SFH620Axx -X001
PART NUMBER PACKAGE OPTION
AGENCY CERTIFIED/PACKAGE
CTR (%)
± 5 mA
UL, CSA, BSI 50 to 600 100 to 600
DIP-4 SFH620AA SFH620AGB
VDE, UL, CSA, BSI 50 to 600 100 to 600
DIP-4 - SFH620AGB-X001
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
DC forward current I
F
± 60 mA
Surge forward current t
p
1.0 μs I
FSM
± 2.5 A
Total power dissipation P
diss
100 mW
OUTPUT
Collector emitter voltage V
CE
70 V
Emitter collector voltage V
EC
7V
Collector current
I
C
50 mA
t
p
1.0 ms I
C
100 mA
Power dissipation P
diss
150 mW
7.62 mm
DIP-4
SFH620AA, SFH620AGB
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 19-Nov-14
2
Document Number: 83676
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage
between emitter and detector
V
ISO
5300 V
RMS
Creepage distance 7mm
Clearance distance 7mm
Insulation thickness between
emitter and detector
0.4 mm
Comparative tracking index per
DIN IEC 112/VDE 0303 part 1
CTI 175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Storage temperature T
stg
-55 to +150 °C
Ambient temperature T
amb
-55 to +100 °C
Junction temperature T
j
100 °C
Soldering temperature
(1)
max. 10 s, dip soldering distance
to seating plane 1.5 mm
T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= ± 60 mA V
F
1.25 1.65 V
Capacitance V
R
= 0 V, f = 1 MHz C
O
50 pF
Thermal resistance R
thja
750 K/W
OUTPUT
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz C
CE
6.8 pF
Thermal resistance R
thja
500 K/W
COUPLER
Collector emitter saturation voltage I
F
= ± 10 mA, I
C
= 2.5 mA V
CEsat
0.25 0.4 V
Coupling capacitance C
C
0.2 pF
Collector emitter leakage current V
CE
= 10 V
SFH620AA I
CEO
10 100 nA
SFH620AGB I
CEO
10 100 nA
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
I
F
= ± 5 mA, V
CE
= 5 V
SFH620AA
CTR
50 600 %
SFH620AGB 100 600 %
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
SFH620AA, SFH620AGB
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 19-Nov-14
3
Document Number: 83676
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Switching Times (Typical Values)
Linear Operation (Saturated)
Note
• As per IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety
ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Current Transfer Ratio (CTR) vs. Temperature Fig. 3 - Output Characteristics (Typ.) Collector Current vs.
Collector Emitter Voltage
isfh620aa_0
R
L
= 1.9 Ω
V
CC
= 5 V
47 Ω
I
C
I
F
= 5 mA
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn-on time I
F
= ± 5 mA, R
L
= 1.9 k, V
CC
= 5 V t
on
2μs
Turn-off time I
F
= ± 5 mA, R
L
= 1.9 k, V
CC
= 5 V t
off
25 μs
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Climatic classification
(according to IEC 68 part 1)
55/100/21
Comparative tracking index CTI 175 399
V
IOTM
10000 V
V
IORM
890 V
P
SO
400 mW
I
SI
275 mA
T
SI
175 °C
Creepage distance standard DIP-4 7 mm
Clearance distance standard DIP-4 7 mm
Insulation thickness,
reinforced rated
per IEC 60950 2.10.5.1 0.4 mm
(%)
10
3
10
2
10
1
- 25 7525050
T
A
(°C)
isfh620a_01
I
F
= 10 mA, V
CC
= 5 V
1
2
3
I
C
I
F
30
10
20
0
015105
V
CE
(V)
isfh620a_02
I
F
= 14 mA
I
F
= 12 mA
I
F
= 10 mA
I
F
= 6 mA
I
F
= 8 mA
I
F
= 4 mA
I
F
= 2 mAI
F
= 1 mA
I
C
(mA)
P1-P3P4-P6

SFH620AA

Mfr. #:
Buy SFH620AA
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Single CTR 50-600%
Lifecycle:
New from this manufacturer.
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