Nexperia
BAW56SRA
Quad high-speed switching diodes
BAW56SRA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 26 June 2017 4 / 12
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 305 K/WR
th(j-a)
thermal resistance
from junction to
ambient
in free air
[2] - - 205 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
[3] - - 40 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for cathode 1cm
2
.
[3] Soldering point of anode tab.
aaa-025767
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-025766
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.01
0
0.02
0.05
0.1
0.33
0.2
0.25
0.5
0.75
FR4 PCB, mounting pad for cathode 1 cm²
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Nexperia
BAW56SRA
Quad high-speed switching diodes
BAW56SRA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 26 June 2017 5 / 12
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per diode
I
F
= 1 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- - 715 mV
I
F
= 10 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- - 855 mV
I
F
= 50 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- - 1 V
V
F
forward voltage
I
F
= 150 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- - 1.25 V
V
R
= 25 V; pulsed; T
j
= 25 °C - - 30 nA
V
R
= 80 V; pulsed; T
j
= 25 °C - - 0.5 µA
V
R
= 25 V; pulsed; T
j
= 150 °C - - 30 µA
I
R
reverse current
V
R
= 80 V; pulsed; T
j
= 150 °C - - 150 µA
C
d
diode capacitance V
R
= 0 V; f = 1 MHz; T
j
= 25 °C - - 2 pF
t
rr
reverse recovery time I
F
= 10 mA; I
R
= 10 mA; R
L
= 100 Ω;
I
R(meas)
= 1 mA; T
amb
= 25 °C
- - 4 ns
V
FRM
peak forward recovery
voltage
I
F
= 10 mA; t
r
= 20 ns - - 1.75 V
aaa-020906
10
-3
10
-2
10
-1
1
I
F
(A)
10
-4
V
F
(V)
0.0 2.01.50.5 1.0
(1)
(2)
(3) (4)
(1) T
j
= 150 °C
(2) T
j
= 85 °C
(3) T
j
= 25 °C
(4) T
j
= −40 °C
Fig. 4. Forward current as a function of forward
voltage; typical values
aaa-020907
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
10
-10
I
R
(A)
10
-11
V
R
(V)
0 1008040 6020
(1)
(2)
(3)
(4)
(5)
(1) T
j
= 150 °C
(2) T
j
= 125 °C
(3) T
j
= 85 °C
(4) T
j
= 25 °C
(5) T
j
= −40 °C
Fig. 5. Reverse current as a function of reverse
voltage; typical values
Nexperia
BAW56SRA
Quad high-speed switching diodes
BAW56SRA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 26 June 2017 6 / 12
V
R
(V)
0 252010 155
aaa-020908
1.0
0.5
1.5
2.0
C
d
(pF)
0.0
f = 1MHz; T
amb
= 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
aaa-020909
t
p
(ms)
10
-1
10
3
10
2
1 10
1
10
I
FSM
(A)
10
-1
Based on square wave currents.
T
amb
= 25 °C
Fig. 7. Non-repetitive forward current as a function of
pulse duration; maximum values

BAW56SRAZ

Mfr. #:
Manufacturer:
Nexperia
Description:
Diodes - General Purpose, Power, Switching BAW56SRA/SOT1268 DFN1412-6
Lifecycle:
New from this manufacturer.
Delivery:
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