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RSS065N03FU6TB

P1-P3P4-P4
RSS065N03
Transistors
1/3
Switching (30V, 6.5A)
RSS065N03
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplications
Power switching, DC / DC converter.
zStructure
Silicon N-channel
MOS FET
zExternal dimensions (Unit : mm)
Each lead has same dimensions
ROHM:SOP8
5.0±0.2
0.2±0.1
6.0±0.3
3.9±0.15
0.5±0.1
(
1
)
(
4
)
(
8
)
(
5
)
Max.1.75
1.27
0.15
0.4±0.1
1.5±0.1
0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
V
V
DSS
Symbol
30
V
V
GSS
±20
A
I
D
±6.5
A
I
DP
±26
A
I
S
1.6
A
I
SP
6.4
W
P
D
2
°C
Tch 150
°C
Tstg
−55 to +150
Limits Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipatino
Channel temperature
Strage temperature
Continuous
Pulsed
Continuous
Source current
(Body diode)
Pulsed
∗1 Pw≤10µs, Duty cycle≤1%
∗
2 Mounted on a ceramic board.
∗
1
∗
1
∗
2
zEquivalent circuit
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
∗1
(8) (7) (6) (5)
(1) (2) (3) (4)
(1) (2) (3) (4)
(8) (7) (6) (5)
zThermal resistance (Ta=25°C)
°C / W
Rth (ch-a) 62.5
Parameter Symbol Limits Unit
Channel to ambient
∗
Mounted on a ceramic board.
∗
RSS065N03
Transistors
2/3
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min.
−−10 µAV
GS
=20V, V
DS
=0V
V
DD
15V
Typ. Max.
Unit
Conditions
Gate-source leakage
V
(BR) DSS
30 −−VI
D
=1mA, V
GS
=0V
Drain-source breakdown voltage
I
DSS
−−10 µAV
DS
=30V, V
GS
=0V
Zero gate voltage drain current
V
GS (th)
1.0 − 2.5 V V
DS
=10V, I
D
=1mAGate threshold voltage
− 19 26 I
D
=6.5A, V
GS
=10V
Static drain-source on-starte
resistance
R
DS (on)
− 27 37 mΩ I
D
=6.5A, V
GS
=4.5V
Forward transfer admittance
− 30 42 I
D
=6.5A, V
GS
=4V
Input capacitance
4.0 −−SI
D
=6.5A, V
DS
=10V
Output capacitance
C
iss
− 430 − pF V
DS
=10V
Reverse transfer capacitance
C
oss
− 155
80
− pF V
GS
=0V
Tum-on delay time
C
rss
−
8
− pF f=1MHz
V
GS
=10V
R
L
=4.62Ω
R
GS
=10Ω
Rise time
t
d (on)
−
8
− ns
Tum-off delay time
t
r
−
31
− ns
Fall time
t
d (off)
−
8
− ns
Total gate charge
t
f
−
6.1
− ns
Gate-source charge
Q
g
−
1.5
− nC
Gate-drain charge
Q
gs
−
2.3
− nC V
GS
=5V
Q
gd
−−nC I
D
=6.5A
∗Pulsed
∗
∗
∗
∗
∗
∗
∗
∗
∗
I
D
=3.25A, V
DD
15V
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Forward voltage
V
SD
−−1.2 V I
S
=6.4A, V
GS
=0V
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
∗Pulsed
∗
RSS065N03
Transistors
3/3
zElectrical characteristic curves
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
10
CAPACITANCE : C
(pF)
1000
100
Ta=25°C
f=1MHz
V
CE
=0V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
C
iss
C
oss
C
rss
0.01 0.1 1 10
DRAIN CURRENT : I
D
(A)
1
10
SWITCHING TIME : t
(ns)
1000
10000
100
Ta=25°C
V
DD
=15V
V
GS
=10V
R
G
=10Ω
Pulsed
Fig.2 Switching Characteristics
t
d(off)
t
d(on)
t
r
t
f
02134567
TOTAL GATE CHARGE : Qg
(nC)
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE : V
GS
(V)
Ta=25°C
V
DD
=15V
I
D
=6.5A
R
G
=10Ω
Pulsed
Fig.3
Dynamic Input Characteristics
0.0 0.5 1.0 1.5 2.0 2.5 4.03.0 3.5
GATE-SOURCE VOLTAGE : V
GS
(V)
10
1
0.1
0.01
0.001
DRAIN CURRENT : I
D
(A)
Fig.4
Typical Transfer Characteristics
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
DS
=10V
Pulsed
0246810121416
GATE-SOURCE VOLTAGE : V
GS
(V)
0
50
100
150
200
250
300
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta=25°C
Pulsed
I
D
=3.25A
I
D
=6.5A
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.01
0.1
1
10
100
SOURCE CURRENT : I
s
(A)
Fig.6 Source Current vs.
Source-Drain Voltage
V
GS
=0V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
=10V
Pulsed
0.1 1 10
DRAIN CURRENT : I
D
(A)
1
10
100
10000
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
V
GS
=4.5V
Pulsed
0.1 1 10
1
10
100
10000
1000
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
V
GS
=4V
Pulsed
0.1 1 10
1
10
100
10000
1000
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
P1-P3P4-P4

RSS065N03FU6TB

Mfr. #:
Buy RSS065N03FU6TB
Manufacturer:
ROHM Semiconductor
Description:
MOSFET RECOMMENDED ALT 755-RSS065N03TB
Lifecycle:
New from this manufacturer.
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