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STTH6006W

P1-P3P4-P6P7-P7
July 2007 Rev 2 1/7
STTH6006W
Turbo 2 ultrafast - high voltage rectifier
Features and benefits
■ Ultrafast switching
■ Low reverse current
■ Low thermal resistance
■ Reduces conduction and switching losses
Description
The STTH6006W uses ST Turbo 2 600 V
technology. This device is specially suited for use
in switching power supplies, and industrial
applications. The V
F
/ T
rr
trade-off has been
specially established to increase the performance
in welding applications.
Table 1. Main product characteristics
I
F(AV)
60 A
V
RRM
600 V
T
j
175° C
V
F
(typ) 1.1 V
t
rr
(max) 60 ns
Table 2. Order code
Part number Marking
STTH6006W STTH6006W
KA
DO-247
STTH6006W
K
A
Table 3. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600 V
I
F(RMS)
RMS forward current 90 A
I
F(AV)
Average forward current, δ = 0.5 T
c
= 95° C 60 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 400 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
175 °C
1. to avoid thermal runaway for a diode on its own heatsink
dP
tot
dT
j
---------------
1
R
th j a–()
--------------------------<
www.st.com
Characteristics STTH6006W
2/7
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.07 x I
F(AV)
+ 0.006 I
F
2
(RMS)
Table 4. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case 0.75 °C/W
Table 5. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2 %
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
50
µA
T
j
= 125° C 160 1600
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2 %
Forward voltage drop
T
j
= 25° C
I
F
= 60 A
1.85
V
T
j
= 150° C 1.10 1.40
Table 6. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ Max. Unit
t
rr
Reverse recovery time
I
F
= 0.5 A, I
rr
= 0.25 A, I
R
= 1 A,
T
j
= 25° C
60
ns
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25° C
60 85
I
RM
Reverse recovery current
I
F
= 60 A, dI
F
/dt = -100 A/µs,
V
R
= 400 V, T
j
= 150° C
10.5 14
t
fr
Forward recovery time
I
F
= 60 A dI
F
/dt = 200 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
500 ns
V
FP
Forward recovery voltage
I
F
= 60 A dI
F
/dt = 200 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
3V
STTH6006W Characteristics
3/7
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
0
10
20
30
40
50
60
70
80
90
100
110
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
P (W)
F(AV)
I (A)
F(AV)
T
δ
=tp/T
tp
δ = 0.05
δ = 0.1
δ = 0.2
δ = 1
δ = 0.5
0
20
40
60
80
100
120
140
160
180
200
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
I (A)
FM
V (V)
FM
T =25°C
(maximum values)
j
T =150°C
(maximum values)
j
T =150°C
(typical values)
j
Figure 3. Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 4. Peak reverse recovery current
versus dI
F
/dt (typical values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Z/R
th(j-c) th(j-c)
t (s)
p
Single pulse
0
5
10
15
20
25
30
35
40
45
50
0 50 100 150 200 250 300 350 400 450 500
I (A)
RM
dI /dt(A/µs)
F
I =2 x I
F F(AV)
I=I
F F(AV)
I =0.5 x I
F F(AV)
I =0.25 x I
F F(AV)
V =400V
T =125°C
R
j
Figure 5. Reverse recovery time versus
dI
F
/dt (typical values)
Figure 6. Reverse recovery charges versus
dI
F
/dt (typical values)
0
50
100
150
200
250
300
350
400
450
500
0 50 100 150 200 250 300 350 400 450 500
t (ns)
rr
dI /dt(A/µs)
F
I =2 x I
F F(AV)
I=I
F F(AV)
I =0.5 x I
F F(AV)
V =400V
T =125°C
R
j
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
0 50 100 150 200 250 300 350 400 450 500
Q (nC)
rr
I =2 x I
F F(AV)
I=I
F F(AV)
I =0.5 x I
F F(AV)
V =400V
T =125°C
R
j
dI /dt(A/µs)
F
P1-P3P4-P6P7-P7

STTH6006W

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Manufacturer:
STMicroelectronics
Description:
Rectifiers Turbo 2 RECTIFIER Ultrafast Hi Vltg
Lifecycle:
New from this manufacturer.
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