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10TQ035STRL

P1-P3P4-P6
Document Number: 93943 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 25-Jun-08 1
Schottky Rectifier, 10 A
10TQ...S
Vishay High Power Products
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for Q101 level
DESCRIPTION
The 10TQ...S Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
10 A
V
R
35/45 V
D
2
PAK
Anode
1
3
Base
cathode
2
N/C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 10 A
V
RRM
35/45 V
I
FSM
t
p
= 5 µs sine 1050 A
V
F
10 Apk, T
J
= 125 °C 0.49 V
T
J
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 10TQ035S 10TQ045S UNITS
Maximum DC reverse voltage V
R
35 45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 151 °C, rectangular waveform 10 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 µs sine or 3 µs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
1050
A
10 ms sine or 6 ms rect. pulse 280
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 6.5 mH 13 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2A
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93943
2 Revision: 25-Jun-08
10TQ...S
Vishay High Power Products
Schottky Rectifier, 10 A
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
10 A
T
J
= 25 °C
0.57
V
20 A 0.67
10 A
T
J
= 125 °C
0.49
20 A 0.61
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
2
mA
T
J
= 125 °C 15
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 900 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 175 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
2.0
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D
2
PAK
10TQ035S
10TQ045S
Document Number: 93943 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 25-Jun-08 3
10TQ...S
Schottky Rectifier, 10 A
Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
100
10
0.1
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward
Current (A)
0 0.2 0.6 1.0 1.4 1.8
T
J
= 25 °C
T
J
= 175 °C
T
J
= 125 °C
0.4
0.8
1.2
1.6
1
1000
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
0.0001
0.001
0.01
0.1
1
05
15 25
35 40 45
10
1000
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10 20
30
100
1000
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
100
20
40 5010 30
T
J
= 25 °C
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
P1-P3P4-P6

10TQ035STRL

Mfr. #:
Buy 10TQ035STRL
Manufacturer:
Vishay
Description:
DIODE SCHOTTKY 35V 10A D2PAK
Lifecycle:
New from this manufacturer.
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