MBR2535CTG

© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 15
1 Publication Order Number:
MBR2535CT/D
MBR2535CTG,
MBR2545CTG
Switch‐mode
Power Rectifiers
The MBR2535CTG/45CTG series uses the Schottky Barrier
principle with a platinum barrier metal. These state-of-the-art devices
have the following features:
Features
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
These are Pb-Free Devices*
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
35 and 45 VOLTS
1
3
2, 4
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
B25x5 = Device Code
x = 3 or 4
G = Pb−Free Package
AKA = Diode Polarity
AY WW
B25x5G
AKA
Device Package Shipping
ORDERING INFORMATION
MBR2535CTG TO−220
(Pb−Free)
50 Units/Rail
MBR2545CTG TO−220
(Pb−Free)
50 Units/Rail
http://onsemi.com
TO−220
CASE 221A
STYLE 6
3
4
1
2
MBR2535CTG, MBR2545CTG
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR2535CTG
MBR2545CTG
V
RRM
V
RWM
V
R
35
45
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 160°C)
Per Device
Per Diode
I
F(AV)
30
15
A
Peak Repetitive Forward Current
per Diode Leg (Rated V
R
, Square Wave, 20 kHz, T
C
= 150°C)
I
FRM
30
A
Non-Repetitive Peak Surge Current per Diode Leg
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
I
FSM
150
A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
I
RRM
1.0 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature (Note 1) T
J
−65 to +175 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/s
ESD Ratings:
Machine Model = C
Human Body Model = 3B
ESD
> 400
> 8000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dP
D
/dT
J
< 1/R
JA
.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic Symbol Value Unit
Thermal Resistance,
Junction-to-Case
Junction-to-Ambient
(Note 2)
R
JC
R
JA
1.5
50
°C/W
2. When mounted using minimum recommended pad size on FR−4 board.
ELECTRICAL CHARACTERISTICS (Per Diode)
Symbol
Characteristic Condition Min Typ Max Unit
V
F
Instantaneous Forward Voltage
(Note 3)
I
F
= 15 Amp, T
J
= 25°C
I
F
= 15 Amp, T
J
= 125°C
I
F
= 30 Amp, T
J
= 25°C
I
F
= 30 Amp, T
J
= 125°C
0.50
0.65
0.62
0.57
0.82
0.72
V
I
R
Instantaneous Reverse Current
(Note 3)
Rated dc Voltage, T
J
= 25°C
Rated dc Voltage, T
J
= 125°C
9.0
0.2
25
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
MBR2535CTG, MBR2545CTG
http://onsemi.com
3
110
T
C
, CASE TEMPERATURE (°C)
20
8.0
4.0
0
T
A
, AMBIENT TEMPERATURE (°C)
200
48
24
16
8.0
0
40
8.0 160
I
F
, AVERAGE FORWARD CURRENT (AMPS)
32
16
12
8.0
4.0
0
12
I
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
120 130 160 180 60 80 180
P
20 4024
28
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
4.0 28 32 36
20
24
SQUARE WAVE
dc
SQUARE WAVE
dc
16
12
24
48
28
28
20
12
4.0
100 120 140
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
RATED V
R
APPLIED
SQUARE WAVE
dc
RATED VOLTAGE APPLIED
R
JC
= 1.5°C/W
R
JA
= 16°C/W
(With TO-220 Heat Sink)
R
JA
= 60°C/W
(No Heat Sink)
SQUARE WAVE
dc
T
J
= 125°C
(CAPACITATIVELOAD)
I
PK
I
AV
+ 5.0
10
20
(RESISTIVELOAD)
I
PK
I
AV
+
Figure 1. Typical Forward Voltage, Per Leg
Figure 2. Typical Reverse Current, Per Leg
0.60
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1000
10
V
R
, REVERSE VOLTAGE (VOLTS)
0
0.2
0.04
0.02
0.002
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
1.0
0.2 0.4 0.8 10 20 30
40
0.1
0.4
1.0
0.1
1.0 50
, REVERSE CURRENT (mA)
R
4.0
2.0
10
20
100
40
200
T
J
= 125°C
150°C
25°C
T
J
= 150°C
125°C
100°C
100
0.01
0.004
25°C
75°C
1.61.2 1.4 1.8
Figure 3. Current Derating, Per Device Figure 4. Current Derating, Per Device
Figure 5. Forward Power Dissipation
140 150 170
32
36
40
44
160
32
36
40
44

MBR2535CTG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 25A 35V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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