APT75F50B2 Datasheet APT75F50L, APT75F50B2 | P1-P3

Absolute Maximum Ratings

Thermal and Mechanical Characteristics

Single die FREDFET

Unit

A

V

mJ

A

Unit

W

°C/W

°C

oz

g

in·lbf

N·m

Ratings

75

47

230

±30

1580

37

Min Typ Max

1040

0.12

0.11

-55 150

300

0.22

6.2

10

1.1

Parameter

Continuous Drain Current @ T

C

= 25°C

Continuous Drain Current @ T

C

= 100°C

Pulsed Drain Current

1

Gate-Source Voltage

Single Pulse Avalanche Energy

2

Avalanche Current,

Repetitive or Non-Repetitive

Characteristic

Total Power Dissipation @ T

C

= 25°C

Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

Operating and Storage Junction Temperature Range

Soldering Temperature for 10 Seconds (1.6mm from case)

Package Weight

Mounting Torque ( TO-264Package), 4.40 or M3 screw

Symbol

I

D

I

DM

V

GS

E

AS

I

AR

Symbol

P

D

R

θ

JC

R

θ

CS

T

J

,T

STG

T

L

W

T

Torque

TYPICAL APPLICATIONS

• ZVSphaseshiftedandotherfullbridge

• Halfbridge

• PFCandotherboostconverter

• Buckconverter

• Singleandtwoswitchforward

• Flyback

FEATURES

• FastswitchingwithlowEMI

• Lowt

rr

forhighreliability

• UltralowC

rss

forimprovednoiseimmunity

• Lowgatecharge

• Avalancheenergyrated

• RoHScompliant

TO-264

T-Max

®

APT75F50B2

APT75F50L

500V,75A,0.075ΩMax,t

rr

≤310ns

APT75F50B2

APT75F50L

N-ChannelFREDFET

Power MOS 8

™

is a high speed, high voltage N-channel switch-mode power MOSFET.

This 'FREDFET' version has a drain-source (body) diode that has been optimized for

high reliability in ZVS phase shifted bridge and other circuits through reduced t

rr

, soft

recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly

reduced ratio of C

rss

/C

iss

result in excellent noise immunity and low switching loss. The

intrinsic gate resistance and capacitance of the poly-silicon gate structure help control

di/dt during switching, resulting in low EMI and reliable paralleling, even when switching

at very high frequency.

Microsemi Website - http://www.microsemi.com

050-8126 Rev C 05-2009

Static Characteristics T

J

=25°Cunlessotherwisespecied

Dynamic Characteristics T

J

=25°Cunlessotherwisespecied

Source-Drain Diode Characteristics

1

Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2

Starting at T

J

= 25°C, L = 2.31mH, R

G

= 25Ω, I

AS

= 37A.

3

Pulse test: Pulse Width < 380µs, duty cycle < 2%.

4

C

o(cr)

is deﬁned as a ﬁxed capacitance with the same stored charge as C

OSS

with V

DS

= 67% of V

(BR)DSS

.

5 C

o(er)

is deﬁned as a ﬁxed capacitance with the same stored energy as C

OSS

with V

DS

= 67% of V

(BR)DSS

. To calculate C

o(er)

for any value of

V

DS

less than V

(BR)DSS,

use this equation: C

o(er)

= -1.65E-7/V

DS

^2 + 5.51E-8/V

DS

+ 2.03E-10.

6

R

G

is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)

Microsemireservestherighttochange,withoutnotice,thespecicationsandinformationcontainedherein.

Unit

V

V/°C

Ω

V

mV/°C

µA

nA

Unit

S

pF

nC

ns

Unit

A

V

ns

µC

A

V/ns

Min Typ Max

500

0.60

0.064 0.075

2.5 4 5

-10

250

1000

±100

Min Typ Max

55

11600

160

1250

725

365

290

65

130

45

55

120

39

Min Typ Max

75

230

1.2

310

570

1.48

3.85

11.3

16.6

20

Test Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 250µA

V

GS

= 10V, I

D

= 37A

V

GS

= V

DS

, I

D

= 2.5mA

V

DS

= 500V T

J

= 25°C

V

GS

= 0V T

J

= 125°C

V

GS

= ±30V

Test Conditions

V

DS

= 50V, I

D

= 37A

V

GS

= 0V, V

DS

= 25V

f = 1MHz

V

GS

= 0V, V

DS

= 0V to 333V

V

GS

= 0 to 10V, I

D

= 37A,

V

DS

= 250V

ResistiveSwitching

V

DD

= 333V, I

D

= 37A

R

G

= 2.2Ω

6

, V

GG

= 15V

Test Conditions

MOSFET symbol

showing the

integral reverse p-n

junction diode

(body diode)

I

SD

= 37A, T

J

= 25°C, V

GS

= 0V

T

J

= 25°C

T

J

= 125°C

I

SD

= 37A

3

T

J

= 25°C

V

DD

= 100V T

J

= 125°C

di

SD

/dt = 100A/µs T

J

= 25°C

T

J

= 125°C

I

SD

≤ 37A, di/dt ≤1000A/µs, V

DD

= 333V,

T

J

= 125°C

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefﬁcient

Drain-Source On Resistance

3

Gate-Source Threshold Voltage

Threshold Voltage Temperature Coefﬁcient

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Parameter

Forward Transconductance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance, Charge Related

Effective Output Capacitance, Energy Related

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Current Rise Time

Turn-Off Delay Time

Current Fall Time

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

1

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Peak Recovery dv/dt

Symbol

V

BR(DSS)

∆V

BR(DSS)

/∆T

J

R

DS(on)

V

GS(th)

∆V

GS(th)

/∆T

J

I

DSS

I

GSS

Symbol

g

fs

C

iss

C

rss

C

oss

C

o(cr)

4

C

o(er)

5

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

I

rrm

dv/dt

050-8126 Rev C 05-2009

APT75F50B2_L

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

V

GS

= 10V

V

DS

> I

D(ON)

x R

DS(ON)

MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

NORMALIZED TO

V

GS

= 10V @ 37A

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

C

oss

C

iss

I

D

= 37A

V

DS

= 400V

V

DS

= 100V

V

DS

= 250V

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

T

J

= 150°C

T

J

= 25°C

T

J

= 150°C

C

rss

V

GS

= 7 & 10V

5.5V

6V

5V

T

J

= 125°C

6.5V

V

GS

, GATE-TO-SOURCE VOLTAGE (V) g

fs

, TRANSCONDUCTANCE R

DS(ON)

, DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (A)

I

SD,

REVERSE DRAIN CURRENT (A) C, CAPACITANCE (pF) I

D

, DRAIN CURRENT (A) I

D

, DRIAN CURRENT (A)

V

DS(ON)

, DRAIN-TO-SOURCE VOLTAGE (V) V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure1,OutputCharacteristics Figure2,OutputCharacteristics

T

J

, JUNCTION TEMPERATURE (°C) V

GS

, GATE-TO-SOURCE VOLTAGE (V)

Figure3,R

DS(ON)

vsJunctionTemperature Figure4,TransferCharacteristics

I

D

, DRAIN CURRENT (A) V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure5,GainvsDrainCurrent Figure6,CapacitancevsDrain-to-SourceVoltage

Q

g

, TOTAL GATE CHARGE (nC) V

SD

, SOURCE-TO-DRAIN VOLTAGE (V)

Figure7,GateChargevsGate-to-SourceVoltage Figure8,ReverseDrainCurrentvsSource-to-DrainVoltage

0 5 10 15 20 25 0 5 10 15 20 25 30

-55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8

0 10 20 30 40 50 60 70 80 0 100 200 300 400 500

0 50 100 150 200 250 300 350 400 0 0.3 0.6 0.9 1.2 1.5

300

250

200

150

100

50

0

2.5

2.0

1.5

1.0

0.5

0

100

80

60

40

20

0

16

14

12

10

8

6

4

2

0

140

120

100

80

60

40

20

0

250

200

150

100

50

0

20,000

10,000

1000

100

10

200

180

160

140

120

100

80

60

40

20

0

050-8126 Rev C 05-2009

APT75F50B2_L

APT75F50B2

APT75F50B2

Products related to this Datasheet