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NSR02F30MXT5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 1
1 Publication Order Number:
NSR02F30MX/D
NSR02F30MX
200 mA, 30 V Schottky
Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current that offers the most optimal
power dissipation in applications. They are housed in a spacing saving
x3DFN 0201 package ideal for space constraint applications.
Features
• Low Forward Voltage Drop − 500 mV (Typ.) @ I
F
= 200 mA
• Low Reverse Current – 20 mA (Typ.) @ V
R
= 30 V
• 200 mA of Continuous Forward Current
• ESD Rating − Human Body Model: Class 2
− Machine Model: Class M3
− CDM: Class IV
• High Switching Speed
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping and Protection
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
30 V
Forward Current (DC) I
F
200 mA
Forward Surge Current
(60 Hz @ 1 cycle)
I
FSM
2 A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
I
FRM
1 A
ESD Rating: Human Body Model
Machine Model
ESD 2 − 4
>400
kV
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
Cathode
2
Anode
www.onsemi.com
Device Package Shipping†
ORDERING INFORMATION
NSR02F30MXT5G X3DFN
(Pb−Free)
10000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
X3DFN2
CASE 152AF
J = Specific Device Code
= (Rotated 180°)
M = Month Code
MARKING
DIAGRAM
PIN 1
M
J
NSR02F30MX
www.onsemi.com
2
Table 1. THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A = 25_C
R
θJA
P
D
695
180
°C/W
mW
Storage Temperature Range
T
stg
−55 to +125 °C
Junction Temperature T
J
+125 °C
1. Mounted onto a 4 in square FR−4 board 100 mm sq. 2 oz. Cu 0.06″ thick single sided. Operating to steady state.
Table 2. ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Parameter
Test Conditions Symbol Min Typ Max Unit
Reverse Leakage V
R
= 10 V I
R
− − 15
mA
Reverse Leakage V
R
= 30 V I
R
− 20 50
mA
Forward Voltage I
F
= 1 mA V
F
− 155 mV
Forward Voltage I
F
= 10 mA V
F
− 250 290 mV
Forward Voltage I
F
= 100 mA V
F
− 375 490 mV
Forward Voltage I
F
= 200 mA V
F
− 500 600 mV
Total Capacitance V
R
= 1.0 V, f = 1.0 MHz C
T
− 6 8 pF
Reverse Recovery Time I
F
= I
R
= 10 mA, I
R(REC)
= 1.0 mA, Figure 2 t
rr
− 2.4 3 ns
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Peak Forward Recover Voltage Definition
NSR02F30MX
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 3. Forward Voltage Figure 4. Leakage Current
V
F
, FORWARD VOLTAGE (V) V
R
, REVERSE VOLTAGE (V)
0.50.40.30.20.10
0.1
1
10
100
1000
302520151050
1.E−08
Figure 5. Total Capacitance Figure 6. Forward Surge Current
V
R
, REVERSE VOLTAGE (V) T
P
(mSec)
302520151050
0
1
3
4
5
7
9
10
10001001010.10.010.001
0
2
4
6
8
10
12
I
F
, FORWARD CURRENT (mA)
I
R
, REVERSE CURRENT (A)
C
T
, TOTAL CAPACITANCE (pF)
I
FSM
(A)
150°C
125°C
85°C 25°C
−25°C
125°C
85°C
25°C
−25°C
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
T
A
= 25°C
2
6
8
T
A
= 25°C prior to surge
Based on square wave current
Figure 7. Thermal Response
PULSE TIME (sec)
0.010.0010.00010.000010.000001 0.10.0000001
0.1
10
100
1000
R(t) (
°
C/W)
Duty Cycle = 50%
1
1 10 100 1000
20%
10%
5%
2%
1%
Single Pulse
P1-P3P4-P4

NSR02F30MXT5G

Mfr. #:
Buy NSR02F30MXT5G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 30V 200MA X3DFN ULTR
Lifecycle:
New from this manufacturer.
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