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PN2907AG

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 3
1 Publication Order Number:
PN2907A/D
PN2907A
Preferred Device
General Purpose Transistor
PNP Silicon
Features
•These are Pb-Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage V
CEO
-60 Vdc
Collector-Base Voltage V
CBO
-60 Vdc
Emitter-Base Voltage V
EBO
-5.0 Vdc
Collector Current - Continuous I
C
-600 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
- 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction- to- Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction-to-Case
R
q
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
PN2907A = Device Code
Y = Year
WW = Work Week
G = Pb-Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
PN2
907A
YWWG
G
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO-92
CASE 29
STYLE 1
PN2907A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 1)
(I
C
= -10 mAdc, I
B
= 0)
V
(BR)CEO
-60 - Vdc
Collector-Base Breakdown Voltage
(I
C
= -10 mAdc, I
E
= 0)
V
(BR)CBO
-60 - Vdc
Emitter-Base Breakdown Voltage
(I
E
= -10 mAdc, I
C
= 0)
V
(BR)EBO
-5.0 - Vdc
Collector Cutoff Current
(V
CE
= -30 Vdc, V
EB(off)
= -0.5 Vdc)
I
CEX
- -50 nAdc
Collector Cutoff Current
(V
CB
= -50 Vdc, I
E
= 0)
(V
CB
= -50 Vdc, I
E
= 0, T
A
= 150°C)
I
CBO
-
-
-0.01
-10
mAdc
Base Current
(V
CE
= -30 Vdc, V
EB(off)
= -0.5 Vdc)
I
B
- -50 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= -0.1 mAdc, V
CE
= -10 Vdc)
(I
C
= -1.0 mAdc, V
CE
= -10 Vdc)
(I
C
= -10 mAdc, V
CE
= -10 Vdc)
(I
C
= -150 mAdc, V
CE
= -10 Vdc) (Note 1)
(I
C
= -500 mAdc, V
CE
= -10 Vdc) (Note 1)
h
FE
75
100
100
100
50
-
-
-
300
-
-
Collector-Emitter Saturation Voltage (Note 1)
(I
C
= -150 mAdc, I
B
= -15 mAdc)
(I
C
= -500 mAdc, I
B
= -50 mAdc)
V
CE(sat)
-
-
-0.4
-1.6
Vdc
Base-Emitter Saturation Voltage (Note 1)
(I
C
= -150 mAdc, I
B
= -15 mAdc)
(I
C
= -500 mAdc, I
B
= -50 mAdc)
V
BE(sat)
-
-
-1.3
-2.6
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product (Notes 1 and 2),
(I
C
= -50 mAdc, V
CE
= -20 Vdc, f = 100 MHz)
f
T
200 - MHz
Output Capacitance
(V
CB
= -10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
- 8.0 pF
Input Capacitance
(V
EB
= -2.0 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
- 30 pF
SWITCHING CHARACTERISTICS
Turn-On Time
(V
CC
= -30 Vdc, I
C
= -150 mAdc,
I
B1
= -15 mAdc) (Figures 1 and 5)
t
on
- 45 ns
Delay Time t
d
- 10 ns
Rise Time t
r
- 40 ns
Turn-Of f Time
(V
CC
= -6.0 Vdc, I
C
= -150 mAdc,
I
B1
= I
B2
= 15 mAdc) (Figure 2)
t
off
- 100 ns
Storage Time t
s
- 80 ns
Fall Time t
f
- 30 ns
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
PN2907A
http://onsemi.com
3
ORDERING INFORMATION
Device Package Shipping
†
PN2907AG TO-92
(Pb-Free)
5000 Units / Bulk
PN2907ARLRAG TO-92
(Pb-Free)
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
0
0
-16 V
200 ns
50
1.0 k
200
-30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
+15 V -6.0 V
1.0 k 37
50
1N916
1.0 k
200 ns
-30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
INPUT
Z
o
= 50 W
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
INPUT
Z
o
= 50 W
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
P1-P3P4-P6

PN2907AG

Mfr. #:
Buy PN2907AG
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 600mA 60V PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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