9 - 12
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CONNECTORIZED MODULES - AMPLIFIERS
9
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
Absolute Maximum Ratings
Bias Supply Voltage (Vs) +11 Vdc to +13 Vdc
RF Input Power (RFIN) +23 dBm
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
10
14
18
22
26
30
0 3 6 9 12 15 18 21
+25 C
+85 C
-55 C
P1dB (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
0 3 6 9 12 15 18 21
+25 C
+85 C
-55 C
Psat (dBm)
FREQUENCY (GHz)
16
20
24
28
32
36
40
0 4 8 12 16 20 24
+25 C
+85 C
-55 C
IP3 (dBm)
FREQUENCY (GHz)
Pin Number Function Description Interface Schematic
1
RFIN &
RF Ground
RF input connector, SMA female, eld replaceable.
This pin is AC coupled and matched to 50 Ohms.
2 Vs Power supply voltage for the ampli er.
3
RFOUT &
RF Ground
RF output connector, SMA female.
This pin is AC coupled and matched to 50 Ohms.
4 GND Power supply ground.
Pin Descriptions
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC-C003
v04.1007
WIDEBAND POWER AMPLIFIER
MODULE, 2 - 20 GHz
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