NRVTS260ESFT3G

© Semiconductor Components Industries, LLC, 2016
October, 2016 − Rev. 2
1 Publication Order Number:
NTS260ESF/D
NTS260ESF, NRVTS260ESF
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 11.7 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
MSL 1
Typical Applications
Switching Power Supplies including Compact Adapters and Flat
Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
TRENCH SCHOTTKY
RECTIFIER
2.0 AMPERES
60 VOLTS
MARKING DIAGRAM
AAC = Specific Device Code
M = Date Code
G = Pb−Free Package
SOD−123FL
CASE 498
Device Package Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTS260ESFT3G SOD−123FL
(Pb−Free)
10,000/
Tape & Ree
l
AACMG
G
NRVTS260ESFT3G SOD−123FL
(Pb−Free)
10,000/
Tape & Ree
l
NTS260ESFT1G SOD−123FL
(Pb−Free)
3,000/
Tape & Ree
l
NRVTS260ESFT1G SOD−123FL
(Pb−Free)
3,000/
Tape & Ree
l
www.onsemi.com
(Note: Microdot may be in either location)
NTS260ESF, NRVTS260ESF
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60 V
Average Rectified Forward Current
(T
L
= TBD°C)
I
O
2.0 A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, T
L
= TBD°C)
I
FRM
4.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
50 A
Storage and Operating Junction Temperature Range (Note 1) T
stg
, T
J
−65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Y
JCL
24.4 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
85 °C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
R
q
JA
330 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 4)
(I
F
= 1.0 A, T
J
= 25°C)
(I
F
= 2.0 A, T
J
= 25°C)
(I
F
= 1.0 A, T
J
= 125°C)
(I
F
= 2.0 A, T
J
= 125°C)
V
F
0.55
0.65
0.47
0.58
V
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
12
3
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm
2
copper pad size (Approximately 1 in
2
) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm
2
copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width 380 ms, Duty Cycle 2.0%.
NTS260ESF, NRVTS260ESF
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.10.90.70.50.30.1
1
10
100
1.20.80.60.2
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V) V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
6040302010 50302010
Figure 5. Typical Junction Capacitance
V
R
, REVERSE VOLTAGE (V)
0.1
100
1000
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
C, JUNCTION CAPACITANCE (pF)
1.4
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
50
1.E−07
1.E−06
1.E−05
1.E−01
40
1.E−07
1.E−05
1.E−01
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
T
A
= 85°C
T
A
= 125°C
T
A
= −55°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= −55°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
1.E−04
T
J
= 25°C
1.5 0.4 1.0
T
A
= 150°C
T
A
= 85°C
T
A
= 85°C
0.1 0.1
1.E−02
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= 85°C
60
110
1.E−06
10
1.E−03
1.3
1.E−04
1.E−03
1.E−02
T
A
= 175°C
1.6
T
A
= 175°C
T
A
= 175°C
T
A
= 175°C
Figure 6. Current Derating
T
C
, CASE TEMPERATURE (°C)
0
2
4
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
R
q
JL
= 24.4°C/W
10 120
0
3
1
SQUARE WAVE
DC
20 30 40 50 60 70 80 90100110 130140150160170

NRVTS260ESFT3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 60V 2A TRENCH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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