BC846 - BC850 — NPN Epitaxial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC846 - BC850 Rev. B1 1
April 2011
BC846 - BC850
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC849, BC850
• Complement to BC856 ... BC860
Absolute Maximum Ratings* T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* T
a
= 25°C unless otherwise noted
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : BC846
: BC847/850
: BC848/849
80
50
30
V
V
V
V
CEO
Collector-Emitter Voltage : BC846
: BC847/850
: BC848/849
65
45
30
V
V
V
V
EBO
Emitter-Base Voltage : BC846/847
: BC848/849/850
6
5
V
V
I
C
Collector Current (DC) 100 mA
P
C
Collector Power Dissipation 310 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 to 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
=30V, I
E
=0 15 nA
h
FE
DC Current Gain V
CE
=5V, I
C
=2mA 110 800
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
90
200
250
600
mV
mV
V
BE
(sat) Collector-Base Saturation Voltage I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
700
900
mV
mV
V
BE
(on) Base-Emitter On Voltage V
CE
=5V, I
C
=2mA
V
CE
=5V, I
C
=10mA
580 660 700
720
mV
mV
f
T
Current Gain Bandwidth Product V
CE
=5V, I
C
=10mA, f=100MHz 300 MHz
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=1MHz 3.5 6 pF
C
ib
Input Capacitance V
EB
=0.5V, I
C
=0, f=1MHz 9 pF
NF Noise Figure
: BC846/847/848
: BC849/850
V
CE
= 5V, I
C
= 200μA
R
G
=2KΩ, f=1KHz
2
1.2
10
4
dB
dB
: BC849
: BC850
V
CE
= 5V, I
C
= 200μA
R
G
=2KΩ, f=30~15000Hz
1.4
1.4
4
3
dB
dB
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
