MC33153
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Power Supply Voltage V
CC
to V
EE
Kelvin Ground to V
EE
(Note 1)
V
CC
− V
EE
KGND − V
EE
20 V
Logic Input V
in
V
EE
−0.3 to V
CC
V
Current Sense Input V
S
−0.3 to V
CC
V
Blanking/Desaturation Input V
BD
−0.3 to V
CC
V
Gate Drive Output
Source Current
Sink Current
Diode Clamp Current
I
O
1.0
2.0
1.0
A
Fault Output
Source Current
Sink Current
I
FO
25
10
mA
Power Dissipation and Thermal Characteristics
D Suffix SO−8 Package, Case 751
Maximum Power Dissipation @ T
A
= 50°C
Thermal Resistance, Junction−to−Air
P Suffix DIP−8 Package, Case 626
Maximum Power Dissipation @ T
A
= 50°C
Thermal Resistance, Junction−to−Air
P
D
R
q
JA
P
D
R
q
JA
0.56
180
1.0
100
W
°C/W
W
°C/W
Operating Junction Temperature T
J
+150 °C
Operating Ambient Temperature T
A
−40 to +105 °C
Storage Temperature Range T
stg
−65 to +150 °C
Electrostatic Discharge Sensitivity (ESD) (Note 2)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
ESD
2500
250
1500
V
NOTE: ESD data available upon request.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Kelvin Ground must always be between V
EE
and V
CC
.
2. ESD protection per JEDEC Standard JESD22−A114−F for HBM
per JEDEC Standard JESD22−A115−A for MM
per JEDEC Standard JESD22−C101D for CDM.
ELECTRICAL CHARACTERISTICS (V
CC
= 15 V, V
EE
= 0 V, Kelvin GND connected to V
EE
. For typical values T
A
= 25°C,
for min/max values T
A
is the operating ambient temperature range that applies (Note 3), unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
LOGIC INPUT
Input Threshold Voltage
High State (Logic 1)
Low State (Logic 0)
V
IH
V
IL
−
1.2
2.70
2.30
3.2
−
V
Input Current
High State (V
IH
= 3.0 V)
Low State (V
IL
= 1.2 V)
I
IH
I
IL
−
−
130
50
500
100
mA
DRIVE OUTPUT
Output Voltage
Low State (I
Sink
= 1.0 A)
High State (I
Source
= 500 mA)
V
OL
V
OH
−
12
2.0
13.9
2.5
−
V
Output Pull−Down Resistor R
PD
− 100 200
kW
FAULT OUTPUT
Output Voltage
Low State (I
Sink
= 5.0 mA)
High State (I
Source
= 20 mA)
V
FL
V
FH
−
12
0.2
13.3
1.0
−
V
3. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
T
low
= −40°C for MC33153 T
high
= +105°C for MC33153
