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TCMT1106

P1-P3P4-P6P7-P9
TCMT110. Series
www.vishay.com
Vishay Semiconductors
Rev. 3.0, 10-Mar-16
4
Document Number: 83510
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Note
• As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 4 - Total Power Dissipation vs. Ambient Temperature Fig. 5 - Forward Voltage vs. Forward Current
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Climatic classification (according to IEC 68 part 1) 40/110/21
Comparative tracking index CTI 175
Maximum rated withstanding isolation voltage t = 1 min V
ISO
3750 V
RMS
Maximum transient isolation voltage V
IOTM
6000 V
Maximum repetitive peak isolation voltage V
IORM
707 V
Apparent charge test voltage (method A)
V
IORM
x 1.6 = V
PR
, type and sample test,
t
m
= 60 s, partial discharge < 5 pC
V
PR
1132 V
peak
Apparent Charge Test Voltage (method B)
V
IORM
x 1.875 = V
PR
, 100 % production test
with t
m
= 1 s, partial discharge < 5 pC
V
PR
1326 V
peak
Isolation resistance V
IO
= 500 V
DC
, T
amb
= 100 °C R
IO
10
11
Ω
Isolation resistance (under fault conditions) V
IO
= 500 V
DC
, T
amb
= T
SI
R
IO
10
9
Ω
Output safety power P
SO
350 mW
Input safety current I
SI
150 mA
Input safety temperature T
SI
175 °C
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Creepage distance 5mm
Clearance distance 5mm
Insulation thickness, reinforced rated per IEC60950 2.10.5.1 0.4 mm
0
50
100
150
200
250
300
0 40 80 120
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
96 11700
Coupled device
Phototransistor
IR-diode
0.1
1
10
100
0.6 0.8 1.0 1.2 1.4 1.6
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
T
amb
= 110 °C
T
amb
= 75 °C
T
amb
= 25 °C
T
amb
= 0 °C
T
amb
= -55 °C
TCMT110. Series
www.vishay.com
Vishay Semiconductors
Rev. 3.0, 10-Mar-16
5
Document Number: 83510
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 6 - Collector Current vs. Collector Emitter Voltage
Fig. 7 - Leakage Current vs. Ambient Temperature
Fig. 8 - Collector Current vs. Collector Emitter Voltage
Fig. 9 - Normalized Current Transfer Ratio (non-saturated) vs.
Ambient Temperature
Fig. 10 - Normalized Current Transfer Ratio (saturated) vs.
Ambient Temperature
Fig. 11 - Collector Emitter Voltage vs. Ambient Temperature
0
5
10
15
20
25
30
35
40
45
50
55
0 1 2 3 4 5 6 7 8 9 10
I
C
- Collector Current (mA)
V
CE
- Collector Emitter Voltage (non-sat) (V)
I
F
= 30 mA
I
F
= 35 mA
I
F
= 1 mA
I
F
= 20 mA
I
F
= 15 mA
I
F
= 10 mA
I
F
= 5 mA
I
F
= 25 mA
0.001
0.01
0.1
1
10
100
1000
10 000
I
CE0
- Leakage Current (nA)
T
amb
- Ambient Temperature (°C)
I
F
= 0 mA
V
CE
= 40 V
V
CE
= 24 V
V
CE
= 12 V
-60 -40 -20 0 20 40 60 80 120100
0
2
4
6
8
10
12
14
00.10.20.30.4
I
C
- Collector Current (mA)
V
CE
- Collector Emitter Voltage (V)
I
F
= 1 mA
I
F
= 10 mA
I
F
= 5 mA
I
F
= 2 mA
0
0.2
0.4
0.6
0.8
1.0
1.2
N
CTR
- Normalized CTR (non-saturated)
T
amb
- Ambient Temperature (°C)
Normalized to CTR value:
I
F
= 5 mA, V
CE
= 5 V, T
amb
= 25 °C
I
F
= 5 mA
-60 -40 -20 0 20 40 60 80 120100
0
0.2
0.4
0.6
0.8
1.0
1.2
N
CTR
- Normalized CTR (sat)
T
amb
- Ambient Temperature (°C)
I
F
= 5 mA
Normalized to CTR value:
I
F
= 5 mA, V
CE
= 5 V, T
amb
= 25 °C
-60 -40 -20 0 20 40 60 80 120100
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
V
CEsat
- Collector Emitter Voltage (V)
T
amb
- Ambient Temperature (°C)
I
c
= 1 mA
I
c
= 2 mA
I
c
= 5 mA
I
F
= 10 mA
-60 -40 -20 0 20 40 60 80 120100
TCMT110. Series
www.vishay.com
Vishay Semiconductors
Rev. 3.0, 10-Mar-16
6
Document Number: 83510
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 12 - Normalized CTR (non-saturated) vs. Forward Current
Fig. 13 - Normalized CTR (saturated) vs. Forward Current
Fig. 14 - F
CTR
vs. Phase Angle
Fig. 15 - F
CTR
vs. Collector Current
Fig. 16 - Switching Time vs. Load Resistance
-160
-140
-120
-100
-80
-60
-40
-20
0
1 10 100 1000
Phase Angle (deg)
f - Frequency (kHz)
V
CE
= 5 V
R
L
= 100 Ω
R
L
= 1000 Ω
1
10
100
1000
0.1 1 10 100
F
CTR
(kHz)
I
C
(mA)
V
CC
= 5 V
P1-P3P4-P6P7-P9

TCMT1106

Mfr. #:
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Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out
Lifecycle:
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