Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1
Copyright 2000
MSC1665.PDF 2001-02-20
WWW.Microsemi . COM
MS2552
RF & MICROWAVE TRANSISTORS
RF PRODUCTS DIVISION
DESCRIPTION
DESCRIPTIONDESCRIPTION
DESCRIPTION
The MS2552 device is a high power pulsed transistor specifically
designed for DME/TACAN avionics applications.
This device is capable of withstanding an infinite load VSWR at any phase
angle under full rated conditions. Low RF thermal resistance and semi-
automatic bonding techniques ensure high reliability and product
consistency.
The MS2552 is housed in the industry-standard AMPAC metal/ceramic
hermetic package with internal input/output matching structures.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
KEY FEATURES KEY FEATURES
KEY FEATURES
Refractory/Gold
Metallization
Emitter Ballasted
Ruggedized VSWR ∞ :1
Capability
Input/Output Matching
Overlay Geometry
Metal/Ceramic Hermetic
Package
P
OUT
= 325 W Min.
G
P
= 6.7 dB Gain
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
SS
S
Avionics Applications
Applies only to rated RF amplifier operation
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25°
°°
°C)
Symbol Parameter Value Unit
P
DISS
Power Dissipation* (T
C
≤ 100°C)
880 W
I
C
Device Current* 24 A
V
CC
Collector-Supply Voltage* 55 V
T
J
Junction Temperature (Pulsed RF Operation) 250
°C
T
STG
Storage Temperature -65 to +150
°C
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance 0.17
°C/W
M
M
S
S
2
2
5
5
5
5
2
2
.400 X .400 2NLFL
hermetically sealed
