P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 200 Volt V
DS
*R
DS(on)
=80Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-200 V
Continuous Drain Current at T
amb
=25°C I
D
-70 mA
Pulsed Drain Current I
DM
-400 mA
Gate Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
625 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-200 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5 -3.5 V ID=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-10
-50
µA
µA
V
DS
=-200 V, V
GS
=0
V
DS
=-160 V, V
GS
=0V,
T=125°C
(2)
On-State Drain Current(1) I
D(on)
-100 mA V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
80
Ω
V
GS
=-10V,I
D
=-50mA
Forward Transconductance
(1)(2)
g
fs
25 mS V
DS
=-25V,I
D
=-50mA
Input Capacitance (2) C
iss
50 pF
Common Source Output
Capacitance (2)
C
oss
15 pF V
DS
=-25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5pF
Turn-On Delay Time (2)(3) t
d(on)
8ns
V
DD
≈-25V, I
D
=-50mA
Rise Time (2)(3) t
r
8ns
Turn-Off Delay Time (2)(3) t
d(off)
8ns
Fall Time (2)(3) t
f
16 ns
(1) Measured under pulsed conditions. Width=300
µs. Duty cycle ≤2%
(2) Sample test.
(
3
E-Line
TO92 Compatible
3-414
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
I
D
- Drain Current (mA)
Transfer Characteristics
Transconductance v drain current
g
fs
-
Forwar
d
T
ran
s
con
d
uctan
c
e(mS
)
-20 -40 -60 -80
-120
-100
60
50
40
30
10
20
0-2-4-6-8-10-4 -8 -12 -16 -20 -24 -28 -32 -36 -40
Saturation Characteristics
V
DS-
Drain Source
Voltage (Volts)
Voltage Saturation Characteristics
VGS-
Gate Source Voltage
(Volts)
-5V
-4V
-20V
-5V
VGS-Gate Source Voltage (Volts)
-280
-240
-160
-40
-80
-200
-120
V
GS=
-20V
-6V
-4V
-140
-100
-20
0
-60
-10V
V
GS
=
-8V
I
D
-
Drain Cur
r
e
nt
(
mA
)
VDS - Drain Source Voltage (Volts)
Capacitance v drain-source voltage
V
DS
-Drain Source Voltage (Volts)
C-Capacitance (pF)
-6V
0
-10
-6
-2
-4
-8
0 -2 -4 -6 -8 -10
I
D=
-60mA
-40mA
-20mA
0-2-4-6-8-10
-140
-120
-80
-20
0
-40
-100
-60
0
50
30
10
20
40
0 -20 -40 -60 -80 -100
C
iss
C
oss
C
rss
I
D
-Drain Current (mA)
-120
-80
-40
-160
I
D
- Drain Current (mA)
V
DS=
-10V
0
V
DS=
-10V
-9V
-10V
-7V
-8V
-7V
0
0
ZVP1320A
3-415
