MMDT4126-7-F Datasheet MMDT4126-7-F, MMDT4126-7 | P1-P3

MMDT4126

Document number: DS30160 Rev. 11 - 2

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www.diodes.com

July 2016

MMDT4126

25V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363

Features

• Ultra-Small Surface Mount Package

• Epitaxial Planar Die Construction

• Ideal for Medium Power Amplification and Switching

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT363

•

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish  Matte Tin Finish. Solderable per MIL-STD-

202, Method 208

• Weight: 0.006 grams (Approximate)

Ordering Information (Note 4)

Part number

Status

Compliance

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

MMDT4126-7-F

Active

AEC-Q101

K2B

7

8

3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2016

2017

2018

2019

2020

2021

2022

2023

2024

2025

2026

2027

Code

D

E

F

G

H

I

J

K

L

M

N

O

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Device Symbol

Top View

SOT363

Top View

Pin-Out

C2

E2

B2

C1

E1

B1

SOT363

K2B

YM

K2B = Product Type Marking Code

YM = Date Code Marking

Y or Y = Year (ex: D = 2016)

M or M = Month (ex: 9 = September)

MMDT4126

Document number: DS30160 Rev. 11 - 2

2 of 6

www.diodes.com

July 2016

MMDT4126

Absolute Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-25

V

Collector-Emitter Voltage

V

CEO

-25

V

Emitter-Base Voltage

V

EBO

-4.0

V

Collector Current

I

C

-200

mA

Thermal Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

P

D

200

mW

Thermal Resistance, Junction to Ambient Air (Note 5)

R

θJA

625

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

ESD Ratings (Note 6)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Notes: 5. For the device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device

is measured when operating in a steady-state condition.

6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

Thermal Characteristics and Derating Information

0

50

100

150

200

250

0 120 200

P , POWER DISSIPATION (mW)

D

T , AMBIENT TEMPERATURE ( C)

Figure 1 Power Derating Curve

A

°

16040 80

MMDT4126

Document number: DS30160 Rev. 11 - 2

3 of 6

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July 2016

MMDT4126

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BV

CBO

-25

—

V

I

C

= -10µA, I

B

= 0

Collector-Emitter Breakdown Voltage (Note 7)

BV

CEO

-25

—

V

I

C

= -10mA, I

B

= 0

Emitter-Base Breakdown Voltage

BV

EBO

-4.0

—

V

I

E

= -10µA, I

C

= 0

Collector Cutoff Current

I

CBO

—

-50 nA

V

CB

= -20V, I

E

= 0

Collector Cutoff Current

I

EBO

—

-50

nA

V

EB

= -3V, I

C

= 0

ON CHARACTERISTICS (Note 7)

DC Current Gain

h

FE

120

60

—

300

—

I

C

= -2mA, V

CE

= -1V

I

C

= -50mA, V

CE

= -1V

Collector-Emitter Saturation Voltage

V

CE(sat)

—

-0.4

V

I

C

= -50mA, I

B

= -5mA

Base-Emitter Saturation Voltage

V

BE(sat)

—

-0.95

V

I

C

= -50mA, I

B

= -5mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

OBO

—

4.5

pF

V

CB

= -5V, f = 1MHz, I

E

= 0

Input Capacitance

C

IBO

—

10

pF

V

EB

= -0.5V, f = 1MHz, I

C

= 0

Small Signal Current Gain

h

fe

120 — 480 —

V

CE

= -1V, I

C

= -2mA,

f = 1kHz

Current Gain Bandwidth Product

f

T

250 — — MHz

V

CE

= -20V, I

C

= -10mA,

f = 100MHz

Noise Figure NF — — 4.0 dB

V

CE

= -5V, I

C

= -100µA,

R

S

= 1kΩ

,

f = 1kHz

Note: 7. Short duration pulse test used to minimize self-heating effect.

MMDT4126-7-F

MMDT4126-7-F

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