MBR2045CTG, MBRF2045CTG
www.onsemi.com
2
TO−220AB
Figure 1. Marking Diagrams
AYWW
MBR2045CTG
AKA
TO−220 FULLPAK
AYWW
B2045G
AKA
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
AKA = Diode Polarity
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45 V
Average Rectified Forward Current
Per Device
Per Diode (T
C
= 165°C)
I
F(AV)
20
10
A
Peak Repetitive Forward Current
per Diode Leg (Square Wave, 20 kHz, T
C
= 163°C)
I
FRM
20 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
See Figure 13
I
RRM
1.0 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature (Note 1) T
J
−65 to +175 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance
(MBR2045CTG) − Junction−to−Case
− Junction−to−Ambient
(MBRF2045CTG) − Junction−to−Case
− Junction−to−Ambient
R
q
JC
R
q
JA
R
q
JC
R
q
JA
2.0
60
4.75
75
°C/W
