IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
T
O
-
2
2
0
A
B
ACTT8-800CTN
Enhanced and high temperature ACTT power switch
23 June 2015 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
AC Thyristor Triac power switch in a SOT78 (TO-220AB) plastic package with self-
protective clamping capabilities against low and high energy transients. This "series
CTN" triac will commutate the full RMS current at the maximum rated junction
temperature (T
j(max)
= 150 °C) without the aid of a snubber. It is used in applications
where "high junction operating temperature capability" is required.
2. Features and benefits
Clamping structure ensuring safe high over-voltage withstand capability
High junction operating temperature capability (T
j(max)
= 150 °C)
High minimum I
GT
for guaranteed immunity to gate noise
Full cycle AC conduction
Over-voltage withstand capability to IEC 61000-4-5
Pin compatible with standard triacs
Protective self turn-on capability for high energy transients
Safe clamping capability for low energy over-voltage transients
Less sensitive gate for high noise immunity
Triggering in three quadrants only
Planar passivated for voltage ruggedness and reliability
High commutation capability with maximum false trigger immunity
Very high immunity to false turn-on by dV/dt and IEC 61000-4-4 fast transient
Package is RoHS compliant
Package meets UL94V0 flammability requirement
3. Applications
AC fan, pump and compressor controls
Highly inductive, resistive and safety loads
Large and small appliances (White Goods)
Reversing induction motor controls
Applications subject to high temperature (T
j(max)
= 150 °C)
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 800 V
NXP Semiconductors
ACTT8-800CTN
Enhanced and high temperature ACTT power switch
ACTT8-800CTN All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 23 June 2015 2 / 14
Symbol Parameter Conditions Min Typ Max Unit
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 130 °C; Fig. 1;
Fig. 2; Fig. 3
- - 8 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 80 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- - 88 A
T
j
junction temperature - - 150 °C
V
PP
peak pulse voltage T
j
= 25 °C; non-repetitive, off-state;
Fig. 6
- - 2 kV
Static characteristics
V
D
= 12 V; I
T
= 100 mA; LD+ G+;
T
j
= 25 °C; Fig. 8
5 - 35 mA
V
D
= 12 V; I
T
= 100 mA; LD+ G-;
T
j
= 25 °C; Fig. 8
5 - 35 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 100 mA; LD- G-;
T
j
= 25 °C; Fig. 8
5 - 35 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 10 - - 40 mA
V
T
on-state voltage I
T
= 10 A; T
j
= 25 °C; Fig. 11 - - 1.5 V
V
CL
clamping voltage I
CL
= 0.1 mA; t
p
= 1 ms; T
j
= 25 °C 850 - - V
Dynamic characteristics
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
4000 - - V/µsdV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 150 °C; exponential
waveform; gate open circuit
2000 - - V/µs
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 8 A;
dV
com
/dt = 20 V/µs; gate open circuit;
snubberless condition
12 - - A/ms
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 8 A;
dV
com
/dt = 10 V/µs; gate open circuit
15 - - A/ms
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 8 A;
dV
com
/dt = 1 V/µs; gate open circuit
20 - - A/ms

ACTT8-800CTNQ

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Triacs AC Thyristor Triac Power Switch
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet