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ESDARF02-1BU2

P1-P3P4-P6P7-P9
This is information on a product in full production.
August 2015 DocID026231 Rev 2 1/9
ESDARF02-1BU2
Single-line bidirectional ESD protection for high speed interface
Datasheet
-
production data
Features
• Bidirectional device
• Extra low diode capacitance: 0.24 pF
• Low leakage current
• 0201 SMD package size compatible
• Ultra small PCB area: 0.18 mm
2
• ECOPACK
®
2 and RoHS compliant component
Complies with the following standards:
• IEC 61000-4-2 level 4
• 15 kV (air discharge)
• 8 kV (contact discharge)
Applications
Where transient overvoltage protection in ESD
sensitive equipment is required, such as:
• Smartphones, mobile phone and accessories
• Tablet PCs, netbooks and notebooks
• Portable multimedia devices and accessories
• Digital cameras and camcorders
• Communication and highly integrated systems
Description
The ESDARF02-1BU2 is a bidirectional single-
line TVS diode designed to protect the high-
speed data lines or other I/O ports against ESD
transients.
The device is ideal for applications where both
extra low line capacitance and board space
saving are required.
Figure 1. Functional diagram (top view)
0201 package
Pin 1 available in different forms
Pin1
www.st.com
Characteristics ESDARF02-1BU2
2/9 DocID026231 Rev 2
1 Characteristics
Note: For a surge greater than the maximum values, the diode will fail in short-circuit
Figure 2. Electrical characteristics (definitions)
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
V
PP
Peak pulse voltage:
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
8
20
kV
P
PP
Peak pulse power (8/20 µs) 30 W
I
PP
Peak pulse current (8/20 µs) 1 A
T
j
Operating junction temperature range - 40 to +150 °C
T
stg
Storage temperature range - 65 to +150 °C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
Symbol Parameter
V = Breakdown voltage
I = Leakage current at V
V = Stand-off voltage
I = Peak pulse current
C
line
= Line capacitance
R
BR
RM RM
RM
PP
d
= Dynamic impedance
aT = Voltage temperature coefficient
I = Breakdown current
R
Table 2. Electrical characteristics (values, T
amb
= 25 °C)
Symbol Test Condition Min. Typ. Max. Unit
V
BR
I
R
= 1 mA 6 V
I
RM
V
RM
= 3 V
170nA
V
CL
I
PP
= 1 A, 8/20 µA 30 V
C
line
F
= (200 MHz- 3000 MHz), V
R
= 0 V 0.24 0.35 pF
DocID026231 Rev 2 3/9
ESDARF02-1BU2 Characteristics
9
Figure 7. S21 attenuation measurement results
Figure 3. Leakage current versus junction
temperature (typical values)
Figure 4. Junction capacitance versus applied
voltage (typical values)
I
R
(nA)
T
j
(°C)
1
10
100
25 50 75 100 125 150
V = V = 3 V
RRM
C(pF)
0,5
0,3
0,1
0,4
0,2
0,0
02
T = 25 °C
j
F = 1 MHz
V = 30 mV
osc
RMS
V
R
(V)
13
Figure 5. ESD response to IEC 61000-4-2
(+8 kV contact discharge)
Figure 6. ESD response to IEC 61000-4-2
(-8 kV contact discharge)
50 V/div
20 ns/div
168 V
36 V
34 V
1
2
3
14 V
4
V : ESD peak voltage
PP
V :clamping voltage at 30 ns
CL
V :clamping voltage at 60 ns
CL
V :clamping voltage at 100 ns
CL
1
2
3
4
50 V/div
-37 V
-27 V
-13 V
2
4
3
-167 V
1
V : ESD peak voltage
PP
V :clamping voltage @ 30 ns
CL
V :clamping voltage @ 60 ns
CL
V :clamping voltage @ 100 ns
CL
1
2
3
4
20 ns/div
10M 100M 1G 10G 100G
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
F (Hz)
dB
P1-P3P4-P6P7-P9

ESDARF02-1BU2

Mfr. #:
Buy ESDARF02-1BU2
Manufacturer:
STMicroelectronics
Description:
TVS Diodes / ESD Suppressors DFD PROTECTION
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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