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MJD44H11T4

P1-P3P4-P6P7-P9P10-P11
This is information on a product in full production.
May 2012 Doc ID 5470 Rev 4 1/11
11
MJD44H11,
MJD45H11
Complementary power transistors
Datasheet − production data
Features
■ Low collector-emitter saturation voltage
■ Fast switching speed
■ Surface-mounting TO-252 (DPAK) power
package in tape and reel (suffix "T4")
Applications
■ Power amplifier
■ Switching circuits
Description
These devices are manufactured using low
voltage multi epitaxial planar technology. They are
intended for general-purpose linear and switching
applications.
.
Figure 1. Internal schematic diagram
1
3
2
DPAK
TO-252
TAB
(TAB)
C
B
(1)
E
(3)
(TAB)
C
B
(1)
E
(3)
Table 1. Device summary
Order codes Marking Polarity Package Packaging
MJD44H11T4 MJD44H11 NPN DPAK Tape and reel
MJD45H11T4 MJD45H11 PNP DPAK Tape and reel
www.st.com
Absolute maximum ratings MJD44H11, MJD45H11
2/11 Doc ID 5470 Rev 4
1 Absolute maximum ratings
Note: For PNP types voltage and current values are negative.
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CEO
Collector-emitter voltage (I
B
= 0) 80 V
V
EBO
Emitter-base voltage (I
C
= 0) 5 V
I
C
Collector current 8 A
I
CM
Collector peak current 16 A
P
TOT
Total dissipation at T
case
= 25°C 20 W
T
STG
Storage temperature -55 to 150 °C
T
J
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case max 6.25 °C/W
MJD44H11, MJD45H11 Electrical characteristics
Doc ID 5470 Rev 4 3/11
2 Electrical characteristics
T
case
= 25 °C; unless otherwise specified.
Note: For PNP types voltage and current values are negative.
2.1 Typical characteristic (curves)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CEO(sus)
(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
Collector-emitter
sustaining voltage (I
B
= 0)
I
C
= 30 mA 80 - V
I
CES
Collector cut-off current
(V
BE
= 0)
V
CE
= 80 V - 10 µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V - 50 µA
V
CE(sat)
(1)
Collector-emitter saturation
voltage
I
C
= 8 A I
B
= 0.4 A - 1 V
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= 8 A I
B
= 0.8 A - 1.5 V
h
FE
(1)
DC current gain
I
C
= 2 A_ V
CE
= 1 V 60 -
I
C
= 4 A_ _ V
CE
= 1 V 40 -
Figure 2. Safe operating area Figure 3. Derating curves
P1-P3P4-P6P7-P9P10-P11

MJD44H11T4

Mfr. #:
Buy MJD44H11T4
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT NPN Gen Pur Switch
Lifecycle:
New from this manufacturer.
Delivery:
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