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NSS40600CF8T1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 4
1 Publication Order Number:
NSS40600CF8/D
NSS40600CF8T1G,
SNSS40600CF8T1G
40 V, 7.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These are Pb−Free Devices*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
COLLECTOR
1, 2, 3, 6, 7, 8
4
BASE
5
EMITTER
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ChipFET]
CASE 1206A
STYLE 4
MARKING DIAGRAM
C
C
C
B
C
C
C
E
PIN CONNECTIONS
5
6
7
81
2
3
4
VA = Specific Device Code
M = Month Code
G = Pb−Free Package
NSS40600CF8T1G
ChipFET
(Pb−Free)
3,000 /
Tape & Reel
−40 VOLTS, 7.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
45 mW
VA M
G
SNSS40600CF8T1G
ChipFET
(Pb−Free)
3,000 /
Tape & Reel
NSS40600CF8T1G, SNSS40600CF8T1G
http://onsemi.com
2
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Max Unit
Collector-Emitter Voltage V
CEO
−40 Vdc
Collector-Base Voltage V
CBO
−40 Vdc
Emitter-Base Voltage V
EBO
−7.0 Vdc
Collector Current − Continuous I
C
−6.0 Adc
Collector Current − Peak I
CM
−7.0 A
Electrostatic Discharge ESD HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
P
D
(Note 1) 830
6.7
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 1)
150
°C/W
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
P
D
(Note 2) 1.4
11.1
W
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 2)
90
°C/W
Thermal Resistance,
Junction−to−Lead #1
R
q
JL
(Note 2)
15
°C/W
Total Device Dissipation
(Single Pulse < 10 sec)
P
Dsingle
(Notes 2 & 3) 2.75
W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR−4 @ 100 mm
2
, 1 oz copper traces.
2. FR−4 @ 500 mm
2
, 1 oz copper traces.
3. Thermal response.
NSS40600CF8T1G, SNSS40600CF8T1G
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typical Max Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(I
C
= −10 mAdc, I
B
= 0)
V
(BR)CEO
−40 − −
Vdc
Collector − Base Breakdown Voltage
(I
C
= −0.1 mAdc, I
E
= 0)
V
(BR)CBO
−40 − −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −0.1 mAdc, I
C
= 0)
V
(BR)EBO
−7.0 − −
Vdc
Collector Cutoff Current
(V
CB
= −40 Vdc, I
E
= 0)
I
CBO
− − −0.1
mAdc
Emitter Cutoff Current
(V
EB
= −7.0 Vdc)
I
EBO
− − −0.1
mAdc
Collector Cutoff Current
(V
CB
= −6.5 Vdc, V
BE(off)
= 0 Vdc)
I
CEO
− − −10
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= −10 mA, I
C
= −2.0 V)
(I
C
= −500 mA, V
CE
= −2.0 V)
(I
C
= −1.0 A, V
CE
= −2.0 V)
(I
C
= −2.0 A, V
CE
= −2.0 V)
(I
C
= −3.0 A, V
CE
= −2.0 V)
h
FE
250
250
220
180
150
−
−
300
−
−
−
−
−
−
−
Collector − Emitter Saturation Voltage (Note 4)
(I
C
= −0.1 A, I
B
= −0.010 A) (Note 5)
(I
C
= −1.0 A, I
B
= −0.100 A)
(I
C
= −1.0 A, I
B
= −0.010 A)
(I
C
= −2.0 A, I
B
= −0.020 A)
(I
C
= −3.0 A, I
B
= −0.030 A)
(I
C
= −4.0 A, I
B
= −0.400 A)
V
CE(sat)
−
−
−
−
−
−
0.007
0.045
0.080
0.150
0.180
0.160
−0.010
−0.075
−0.110
−0.200
−0.250
−0.220
V
Base − Emitter Saturation Voltage (Note 4)
(I
C
= −1.0 A, I
B
= −0.01 A)
V
BE(sat)
− − −0.90
V
Base − Emitter Turn−on Voltage (Note 4)
(I
C
= −2.0 A, V
CE
= −3.0 V)
V
BE(on)
− − −0.90
V
Cutoff Frequency
(I
C
= −100 mA, V
CE
= −5.0 V, f = 100 MHz)
f
T
100 − −
MHz
Input Capacitance (V
EB
= −0.5 V, f = 1.0 MHz) Cibo − − 650 pF
Output Capacitance (V
CB
= −3.0 V, f = 1.0 MHz) Cobo − − 150 pF
SWITCHING CHARACTERISTICS
Delay (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA) t
d
− − 120 ns
Rise (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA) t
r
− − 220 ns
Storage (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA) t
s
− − 650 ns
Fall (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA) t
f
− − 240 ns
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. Guaranteed by design but not tested.
P1-P3P4-P6

NSS40600CF8T1G

Mfr. #:
Buy NSS40600CF8T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT LOW VCES 40V PNP
Lifecycle:
New from this manufacturer.
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