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DMN4010LFG-7

P1-P3P4-P6P7-P7
POWERDI is a registered trademark of Diodes Incorporated
DMN4010LFG
Document number: DS36764 Rev. 2 - 2
4 of 7
www.diodes.com
March 2015
© Diodes Incorporated
D
MN4010LFG
ADVANCE INFO R MA T I O N
0
0.005
0.01
0.015
0.02
0 2 4 6 8 10 12 14 16 18 20
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
V = 4.5V
GS
V = 10V
GS
0
0.02
0.04
0.06
0.08
0.1
0 2 4 6 8 10 12 14 16 18 20
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristic
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
I = 14A
D
I = 11A
D
0
0.005
0.01
0.015
0.02
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 10V
GS
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0 25 50 75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R
,
D
R
A
I
N
-
S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 4.5V
I = 11A
GS
D
V = V
I = 14A
GS
D
10
0
0.005
0.01
0.015
0.02
0.025
0.03
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
V = 4.5V
I = 11A
GS
D
V = V
I = 14A
GS
D
10
0.8
1.1
1.4
1.7
2
2.3
-50
-25
0 25 50 75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
I = 1mA
D
I = 250µA
D
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
GS(th)
POWERDI is a registered trademark of Diodes Incorporated
DMN4010LFG
Document number: DS36764 Rev. 2 - 2
5 of 7
www.diodes.com
March 2015
© Diodes Incorporated
D
MN4010LFG
ADVANCE INFO R MA T I O N
0
5
10
15
20
25
30
0 0.3
0.6
0.9
1.2
1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I
,
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
,
J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
T
C
iss
C
oss
C
rss
f = 1MHz
0
2
4
6
8
10
0 5 10 15
20
25
30
35
40
Q (nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
GS
V = 20V
I = A
DS
D
14
0.01
0.1
1
10
100
1000
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
J(max)
A
V = 10V
Single Pulse
GS
DUT on 1 * MRP Board
0.001
0.01
0.1
1
0.00001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
r
(
t
)
,
T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L
R
E
S
I
S
T
A
N
C
E
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = Single Pulse
R (t) = r(t) * R
R = 72°C/W
Duty Cycle, D = t1/ t2
θ θ
θ
JA JA
JA
D = 0.005
POWERDI is a registered trademark of Diodes Incorporated
DMN4010LFG
Document number: DS36764 Rev. 2 - 2
6 of 7
www.diodes.com
March 2015
© Diodes Incorporated
D
MN4010LFG
ADVANCE INFO R MA T I O N
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
POWERDI
®
3333
-
8
Dim
Min
Max
Typ
D
3.25
3.35 3.30
E
3.25
3.35 3.30
D2
2.22
2.32 2.27
E2
1.56
1.66 1.61
A
0.75
0.85 0.80
A1
0 0.05 0.02
A3
−
−
0.203
b
0.27
0.37 0.32
b2
−
−
0.20
L
0.35
0.45 0.40
L1
−
−
0.39
e
−
−
0.65
Z
−
−
0.515
All Dimensions in mm
Dim
ensions
Value (in mm)
C
0.650
G
0.230
G1
0.420
Y
3.700
Y1
2.250
Y2
1.850
Y3
0.700
X
2.370
X2
0.420
A
A1
A3
D
D2
E
E2
b2
(4x)
L
(4x)
L1
(3x)
b (8x)eZ (4x)
Pin 1 ID
1
4
8
5
X
Y
Y1
Y3
Y2
X2
C
1 4
8 5
G
G1
P1-P3P4-P6P7-P7

DMN4010LFG-7

Mfr. #:
Buy DMN4010LFG-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 40 N-Ch Enh FET 31V to 99V 1810pF
Lifecycle:
New from this manufacturer.
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