ZXRE160
Document number: DS35688 Rev. 2 - 2
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Absolute Maximum Ratings (Voltages to GND, @T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Rating Unit
V
IN
IN Voltage relative to GND 20 V
V
OUT
OUT Voltage relative to GND 20 V
V
FB
FB Voltage relative to GND 20 V
P
GND
PGND Voltage relative to GND -0.3 to +0.3 V
I
OUT
OUT Pin Current 20 mA
T
J
Operating Junction Temperature -40 to 150 °C
T
ST
Storage Temperature 55 to 150 °C
These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure.
Operation at the absolute maximum rating for extended periods may reduce device reliability.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events.
Suitable ESD precautions should be taken when handling and transporting these devices.
Package Thermal Data
Package
θ
JA
P
DIS
T
A
= 25°C, T
J
= 150°C
SC70/SOT353 400°C/W 310mW
TSOT25 250°C/W 500mW
X2-DFN1520-6 TBD TBD
Recommended Operating Conditions (@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Min Max Units
V
IN
IN Voltage Range (0 to +125°C) 2 18
V
V
IN
IN Voltage Range (-40°C to 0°C) 2.2 18
V
OUT
OUT Voltage Range 0.2 18
I
OUT
OUT Pin Current 0.3 15 mA
T
A
Operating Ambient Temperature
Range
-40 +125 °C
ZXRE160
Document number: DS35688 Rev. 2 - 2
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Electrical Characteristics (@T
A
= +25°C, V
DD
= 3V, unless otherwise specified.)
T
A
= +25°C, V
IN
= 3.3V, V
OUT
= V
FB
, I
OUT
= 5mA, unless otherwise specified.) (Note 4)
Symbol Parameter Conditions Min Typ Max Units
V
FB
Feedback voltage
ZXRE160A 0.597 0.6 0.603
V
ZXRE160 0.594 0.6 0.606
T
A
= 0°C to +85°C
ZXRE160A 0.595 0.605
ZXRE160 0.592 0.608
T
A
= -40°C to +85°C
ZXRE160A 0.594 0.606
ZXRE160 0.591 0.609
T
A
= -40°C to +125°C
ZXRE160A 0.593 0.607
ZXRE160 0.590 0.610
FB
LOAD
Feedback pin load
regulation
I
OUT
= 1 to 15mA
3.8 6
mV
T
A
= -40 to +125°C
10
FB
LINE
Feedback pin line
regulation
V
IN
= 2V to 18V
0.3 1
mV
V
IN
= 2.2V to 18V T
A
= -40 to +125°C
1.5
FB
OVR
Output voltage
regulation
V
OUT
= 0.2V to 18V,
I
OUT
= 1mA
(Ref. Figure 1)
1
mV
T
A
= -40 to +125°C
1.5
I
FB
FB input bias current
V
IN
= 18V
-45
nA
T
A
= -40 to +125°C
-200 0
V
FB
= 0.7V
-50 50
I
IN
Input current
V
IN
= 2V to 18V
I
OUT
= 0.3mA
0.35 0.7
mA
V
IN
= 2.2V to 18V T
A
= -40 to +125°C
1
V
IN
= 2V to 18V
I
OUT
= 10mA
0.48 1
mA
V
IN
= 2.2V to 18V T
A
= -40 to +125°C
1.5
V
IN
= 18V, I
OUT
= 0.3mA V
FB
= 0.7V
3
I
OUT(LK)
OUT leakage current
V
IN
= 18V,
V
OUT
= 18V,
V
FB
=0V
0.1
µA
T
A
= +125°C
1
Z
OUT
Dynamic Output
Impedance
I
OUT
= 1 to 15mA
f < 1kHz
0.25 0.4
Ω
T
A
= -40 to +125°C
0.6
PSRR
Power supply rejection
ratio
F = 300kHz
V
AC
= 0.3V
PP
>45 dB
BW
Amplifier Unity Gain
Frequency
Ref: Figure 2
600 kHz
G
Amplifier
Transconductance
5000 mA/V
Note: 4. Production testing of the device is performed at +25°C. Functional operation of the device and parameters specified over the operating temperature
range are guaranteed by design, characterization and process control.
ZXRE160
Document number: DS35688 Rev. 2 - 2
6 of 15
www.diodes.com
June 2012
© Diodes Incorporated
ZXRE160
NEW PRODUCT
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Product Line o
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Diodes Incorporated
Typical Characteristics

ZXRE160AFT4-7

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Voltage References 0.5V ENH ADJ Prec Shunt REG 5-Term
Lifecycle:
New from this manufacturer.
Delivery:
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