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BYS12-90HE3/TR

P1-P3P4-P4
BYS12-90
www.vishay.com
Vishay General Semiconductor
Revision: 23-Dec-14
1
Document Number: 88950
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Very low switching losses
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.5 A
V
RRM
90 V
I
FSM
40 A
V
F
at I
F
= 1.0 A 0.75 V
T
J
max. 150 °C
Package DO-214AC (SMA)
Diode variations Single die
DO-214AC (SMA)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYS12-90 UNIT
Device marking code BYS 209
Maximum repetitive peak reverse voltage V
RRM
90 V
Maximum average forward rectified current I
F(AV)
1.5 A
Peak forward surge current single half sine-wave
superimposed on rated load
8.3 ms
I
FSM
40
A
10 ms 30
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Junction and storage temperature range T
J
, T
STG
-55 to +150 °C
BYS12-90
www.vishay.com
Vishay General Semiconductor
Revision: 23-Dec-14
2
Document Number: 88950
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Notes
(1)
Mounted on epoxy-glass hard tissue
(2)
Mounted on epoxy-glass hard tissue, 50 mm
2
35 μm Cu
(3)
Mounted on Al-oxide-ceramic (Al
2
O
3
), 50 mm
2
35 μm Cu
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYS12-90 UNIT
Maximum instantaneous forward voltage
(1)
I
F
= 1.0 A
T
J
= 25 °C V
F
750
mV
I
F
= 15 mA 360
Maximum DC reverse current
(1)
V
RRM
T
J
= 25 °C
I
R
100 μA
T
J
= 100 °C 1 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYS12-90 UNIT
Maximum thermal resistance, junction to lead R
JL
25 °C/W
Maximum thermal resistance, junction to ambient
R
JA
(1)
150
°C/WR
JA
(2)
125
R
JA
(3)
100
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
BYS12-90-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel
BYS12-90-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel
BYS12-90HE3/TR
(1)
0.064 TR 1800 7" diameter plastic tape and reel
BYS12-90HE3/TR3
(1)
0.064 TR3 7500 13" diameter plastic tape and reel
BYS12-90HE3_A/H
(1)
0.064 H 1800 7" diameter plastic tape and reel
BYS12-90HE3_A/I
(1)
0.064 I 7500 13" diameter plastic tape and reel
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 20 40 60 80 100 120 140 160
R
thJA
≤ K/W
V
R
= V
RRM
Half Sine-Wave
Ambient Temperature (°C)
Average Forward Current (A)
BYS12-90
www.vishay.com
Vishay General Semiconductor
Revision: 23-Dec-14
3
Document Number: 88950
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
V
R
= 0 V, Half Sine-Wave
R
thJA
= 25 K/W
100 K/W
125 K/W
150 K/W
2.0
1.6
1.2
0.8
0.4
0
0 40 80 120 160 200
Ambient Temperature (°C)
Average Forward Current (A)
2.2
1.8
1.4
1.0
0.6
0.2
100 000
10 000
1000
100
25 50 75 100 125 150
Reverse Current (µA)
Junction Temperature (°C)
V
R
= V
RRM
2500
2000
1500
1000
500
0
25 50 75 100 125 150
V
R
= V
RRM
P
R
- Limit
at 100 % V
R
Reverse Power Dissipation (mW)
Junction Temperature (°C)
180
160
140
120
100
80
60
40
20
0
0.1 1 10 100
f = 1 MHz
Reverse Voltage (V)
Diode Capacitance (pF)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
P1-P3P4-P4

BYS12-90HE3/TR

Mfr. #:
Buy BYS12-90HE3/TR
Manufacturer:
Vishay
Description:
DIODE SCHOTTKY 90V 1.5A DO214AC
Lifecycle:
New from this manufacturer.
Delivery:
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