N-Channel MOSFET
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Single die MOSFET
Unit
A
V
mJ
A
Unit
W
°C/W
°C
V
oz
g
in·lbf
N·m
Ratings
60
36
325
±30
3725
43
Min Typ Max
960
0.13
0.15
-55 150
2500
1.03
29.2
10
1.1
Parameter
Continuous Drain Current @ T
C
= 25°C
Continuous Drain Current @ T
C
= 100°C
Pulsed Drain Current
1
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current,
Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
C
= 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage
(50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Package Weight
Terminals and Mounting Screws.
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Symbol
P
D
R
θ
JC
R
θ
CS
T
J
,T
STG
V
Isolation
W
T
Torque
Microsemi Website - http://www.microsemi.com
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
FEATURES
• Fast switching with low EMI/RFI
• Low R
DS(on)
• Ultra low C
rss
for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
S
O
T
-2
2
7
IS OTO P
®
file # E145592
"UL Recognized"
G
S
S
D
APT58M80J
800V, 60A, 0.10Ω Max
APT58M80J
Power MOS 8
™
is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low C
rss
"Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in fl yback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
050-8111 Rev C 8-2011