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BSC200P03LSGAUMA1
P1-P3
P4-P6
P7-P9
BSC200P
03LS G
1 Power dissipation
2 Drain current
P
tot
=f(
T
C
);
t
p
≤10 s
I
D
=f(
T
C
); |
V
GS
|≥10 V;
t
p
≤10 s
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
C
=25 °C
1)
;
D
=0
Z
thJS
=f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
DC
10 µs
100 µs
1 ms
10 ms
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
-I
D
[A]
-V
DS
[V]
limited by on-state
resistance
single
pulse
0.05
0.1
0.2
0.5
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-2
10
-1
10
0
10
1
Z
thJS
[K/W]
t
p
[s]
0
10
20
30
40
50
60
70
0
40
80
120
160
P
tot
[W]
T
C
[°
C]
0
5
10
15
0
40
80
120
160
-I
D
[A]
T
C
[°
C]
Rev. 1.0
4
page 4
20
11
-0
9
-
05
BSC200P
03LS G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(
V
DS
);
T
j
=25 °C
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)ma
x
g
fs
=f(
I
D
);
T
j
=25 °C
parameter:
T
j
-2.7 V
-3 V
-3.2 V
-4.5 V
-3.5 V
-10 V
10
15
20
25
30
35
40
45
50
55
60
65
70
0
10
20
30
40
R
DS(on)
[m
W
]
-I
D
[A]
25
°C
150
°C
0
10
20
30
40
50
0
1
2
3
4
-I
D
[A]
-V
GS
[V]
0
10
20
30
40
0
10
20
30
g
fs
[S]
-I
D
[A]
-2.3 V
-2.7 V
-3 V
-4.5 V
-10 V
-3.2 V
-3.5 V
0
5
10
15
20
25
30
35
40
0
1
2
3
-I
D
[A]
-V
DS
[V]
Rev. 1.0
4
page 5
20
11
-0
9
-
05
BSC200P
03LS G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=-12.5 A;
V
GS
=-10 V
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
;
I
D
=-100
m
A
11 Typ. capacitances
12 Forward characteristics of reverse diode
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
I
F
=f(
V
SD
)
parameter:
T
j
typ
max
0
4
8
12
16
20
24
28
-
60
-
20
20
60
100
140
180
R
DS(on)
[m
W
]
T
j
[°
C]
Ciss
Coss
Crss
10
2
10
3
10
4
100
1000
10000
0
10
20
30
C
[pF]
-V
DS
[V]
min.
max
.
0
0,5
1
1,5
2
2,5
3
-
60
-
20
20
60
100
140
180
-V
GS(th)
[V]
T
j
[°
C]
25
°C, typ
150
°C, 98%
25
°C, 98%
150
°C, typ
0,1
1
10
100
0
0,5
1
1,5
I
F
[A]
-V
SD
[V]
Rev. 1.0
4
page 6
20
11
-0
9
-
05
P1-P3
P4-P6
P7-P9
BSC200P03LSGAUMA1
Mfr. #:
Buy BSC200P03LSGAUMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 30V 12.5A TDSON-8
Lifecycle:
New from this manufacturer.
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BSC200P03LSGAUMA1