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EMG2DXV5T1G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 1
1 Publication Order Number:
EMG5DXV5/D
EMG2DXV5, EMG5DXV5
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SOT−553 package which is designed for low power surface mount
applications.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Moisture Sensitivity Level: 1
• Available in 8 mm, 7 inch Tape and Reel
• Lead−Free Solder Plating
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
mW
°C/W
Thermal Resistance −
Junction-to-Ambient
R
q
JA
540 (Note 1)
370 (Note 2)
°C/W
Thermal Resistance −
Junction-to-Lead
R
q
JL
264 (Note 1)
287 (Note 2)
°C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
SOT−553
CASE 463B
NPN SILICON
BIAS RESISTOR
TRANSISTORS
MARKING
DIAGRAM
XX = UF (EMG5)
UP (EMG2)
M = Date Code
G =Pb−Free Package
XXM G
G
http://onsemi.com
1
5
1
5
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
(5) (4)
(3)(2)(1)
Q1Q1 Q2
R1
R2 R2
R1
EMG2DXV5, EMG5DXV5
http://onsemi.com
2
DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K)
EMG2DXV5 SOT−553 UP 47 47
EMG5DXV5 SOT−553 UF 10 47
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (Q1 & Q2)
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0) I
CBO
− − 100 nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0) I
CEO
− − 500 nAdc
Emitter-Base Cutoff Current (V
EB
= 6.0 V, I
C
= 0) EMG2DXV5
EMG5DXV5
I
EBO
−
−
−
−
0.1
0.2
mAdc
Collector-Base Breakdown Voltage (I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − − Vdc
Collector-Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 − − Vdc
ON CHARACTERISTICS (Q1 & Q2) (Note 3)
DC Current Gain (V
CE
= 10 V, I
C
= 5.0 mA) EMG2DXV5
EMG5DXV5
h
FE
80
80
140
140
−
−
Collector-Emitter Saturation Voltage (IC = 10 mA, I
B
= 0.3 mA) V
CE(sat)
− − 0.25 Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW) EMG2DXV5
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW) EMG5DXV5
V
OL
−
−
−
−
0.2
0.2
Vdc
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9 − − Vdc
Input Resistor EMG2DXV5
EMG5DXV5
R
1
32.9
7.0
47
10
61.1
13
kW
Resistor Ratio EMG2DXV5
EMG5DXV5
R
1
/R
2
0.8
0.17
1.0
0.21
1.2
0.25
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Figure 1. Derating Curve
350
200
150
100
50
0
−50 0 50 100 150
T
A
, AMBIENT TEMPERATURE (°C)
R
q
JA
= 370°C/W
250
P
D
, POWER DISSIPATION (mW)
300
EMG2DXV5, EMG5DXV5
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS — EMG2DXV5
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 2. V
CE(sat)
versus I
C
0246810
100
10
1
0.1
0.01
0.001
V
in
, INPUT VOLTAGE (VOLTS)
T
A
=-25°C
75°C
25°C
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
10
1
0.1
010 203040 50
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Output Current versus Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
T
A
=75°C
25°C
-25°C
100
10
1 100
25°C
75°C
50
010203040
1
0.8
0.6
0.4
0.2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
Figure 6. Input Voltage versus Output Current
0
20 40
50
10
1
0.1
0.01
I
C
, COLLECTOR CURRENT (mA)
25°C
75°C
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS
)
V
CE
= 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
T
A
=-25°C
T
A
=-25°C
P1-P3P4-P6P7-P7

EMG2DXV5T1G

Mfr. #:
Buy EMG2DXV5T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 50V Dual BRT NPN
Lifecycle:
New from this manufacturer.
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