Document Number: 70063
S11-1350–Rev. K, 04-Jul-11
www.vishay.com
5
Vishay Siliconix
DG428, DG429
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
g. R
DS(on)
= R
DS(on)
MAX – R
DS(on)
MIN
(
R
DS(on)
AVE
)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
(for single supply)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V, WR
= 0,
RS
= 2.4 V, V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Typ.
c
A Suffix
- 55°C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full 0 12 0 12 V
Drain-Source
On-Resistance
R
DS(on)
V
D
= ± 10 V, V
AL
= 0.8 V
I
S
= - 500 µA, V
AH
= 2.4 V
Room 80 150 150
R
DS(on)
Match
g
R
DS(on)
0 V < V
S
< 10 V
I
S
= - 1 mA
Room 5 %
Source Off Leakage Current
I
S(off)
V
S
= 0 V, 10 V,
V
EN
= 0 V, V
D
= 10 V, 0 V
Room
Full
± 0.03
- 0.5
- 50
0.5
50
- 0.5
- 50
0.5
50
nA
Drain Off Leakage Current
I
D(off)
V
D
= 0 V, 10 V
V
S
= 10 V, 0 V
V
EN
= 0 V
DG428
Room
Full
± 0.07 - 1
- 100
1
100
- 1
- 100
1
100
DG429
Room
Full
± 0.05 - 1
- 50
1
50
- 1
- 50
1
50
Drain On Leakage Current
I
D(on)
V
S
= V
D
= 0 V, 10 V
V
EN
= 2.4 V
V
AL
= 0.8 V
V
AH
= 2.4 V
DG428
Room
Full
± 0.07 - 1
- 100
1
100
- 1
- 100
1
100
DG429
Room
Full
± 0.05
- 1
- 50
1
50
- 1
- 50
1
50
Digital Control
Logic Input Current
Input Voltage High
I
AH
V
A
= 2.4 V
Full 1 1
µA
V
A
= 12 V
Full 1 1
Logic Input Current
Input Voltage Low
I
AL
V
EN
= 0 V, 2.4 V, V
A
= 0 V
RS
= 0 V, WR = 0 V
Full - 1 - 1
Dynamic Characteristics
Transition Time
t
TRANS
S
1
= 10 V/ 2 V, S
8
= 2 V/ 10 V
See Figure 5
Room
Full
160 280
350
280
350
ns
Break-Before-Make Interval
t
OPEN
See Figure 4
Room
Full
40 25
10
25
10
Enable and WriteTurn-On Time
t
ON(EN,WR)
S
1
= 5 V
See Figure 6 and 7
Room
Full
110 300
400
300
400
Enable and Reset Turn-Off Time
t
OFF(EN,RS)
S
1
= 5 V
See Figure 6 and 8
Room
Full
70 300
400
300
400
Charge Injection Q
V
GEN
= 6 V, R
GEN
= 0
C
L
= 1 nF, See Figure 9
Room 4 pC
Off Isolation OIRR
V
EN
= 0 V, R
L
= 300
C
L
= 15 pF, V
S
= 7 V
RMS
f = 100 kHz
Room - 75 dB
Minimum Input Timing Requirements
Write Pulse Width
t
W
See Figure 2
Full 100 100
ns
A
X
, EN Data Set Up time t
S
Full 100 100
A
X
, EN Data Hold Time t
H
Full 10 10
Reset Pulse Width
t
RS
V
S
= 5 V, See Figure 3
Full 100 100
Power Supplies
Positive Supply Current I+
V
EN
= 0 V, V
A
= 0, RS = 5 V
Room 20 100 100 µA
x 100 %
