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BYW29EX-200,127

P1-P3P4-P6P7-P9
NXP Semiconductors Product specification
Rectifier diodes BYW29EX series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal - 2500 V
both terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
C
isol
Capacitance from both terminals f = 1 MHz - 10 - pF
to external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to with heatsink compound - - 5.5 K/W
heatsink without heatsink compound - - 7.2 K/W
R
th j-a
Thermal resistance junction to in free air - 55 - K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage I
F
= 8 A; T
j
= 150˚C - 0.80 0.895 V
I
F
= 8 A - 0.92 1.05 V
I
F
= 20 A - 1.1 1.3 V
I
R
Reverse current V
R
= V
RWM
; T
j
= 100 ˚C - 0.2 0.6 mA
V
R
= V
RWM
-210µA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Q
s
Reverse recovery charge I
F
= 2 A; V
R
≥ 30 V; -dI
F
/dt = 20 A/µs- 4 11 nC
t
rr1
Reverse recovery time I
F
= 1 A; V
R
≥ 30 V; - 20 25 ns
-dI
F
/dt = 100 A/µs
t
rr2
Reverse recovery time I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A - 15 20 ns
V
fr
Forward recovery voltage I
F
= 1 A; dI
F
/dt = 10 A/µs-1-V
October 1998 2 Rev 1.200
NXP Semiconductors Product specification
Rectifier diodes BYW29EX series
ultrafast, rugged
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Circuit schematic for t
rr2
Fig.4. Definition of t
rr2
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
I = 1A
R
rec
I = 0.25A
0A
trr2
0.5A
IF
IR
time
time
V
F
V
fr
V
F
I
F
024681012
0
2
4
6
8
10
12
D = 1.0
0.5
0.2
0.1
BYW29
IF(AV) / A
PF / W
D =
t
p
t
p
T
T
t
I
Ths(max) / C
150
139
128
117
106
95
84
Vo = 0.791 V
Rs = 0.013 ohms
shunt
Current
to ’scope
D.U.T.
Voltage Pulse Source
R
012345678
0
1
2
3
4
5
6
7
8
a = 1.57
1.9
2.2
2.8
4
BYW29
IF(AV) / A
PF / W
Ths(max) / C
150
144.5
139
133.5
128
122.5
117
111.5
106
Vo = 0.791 V
Rs = 0.013 Ohms
October 1998 3 Rev 1.200
NXP Semiconductors Product specification
Rectifier diodes BYW29EX series
ultrafast, rugged
Fig.7. Maximum t
rr
at T
j
= 25 ˚C.
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C.
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 ˚C.
Fig.11. Transient thermal impedance; Z
th j-hs
= f(t
p
).
1
10
trr / ns
1 10 100
1000
100
dIF/dt (A/us)
IF=1A
IF=10A
10
1.0
1.0 10 100
-dIF/dt (A/us)
Qs / nC
IF=10A
5A
2A
1A
100
10
1
0.1
0.01
Irrm / A
1
10 100
-dIF/dt (A/us)
IF=1A
IF=10A
1us 10us 100us 1ms 10ms 100ms 1s 10s
0.001
0.01
0.1
1
10
BYW29F/EX
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
0 1 2
30
20
10
0
typ
max
IF / A
0.5 1.5
VF / V
Tj=150 C
Tj=25 C
BYW29
October 1998 4 Rev 1.200
P1-P3P4-P6P7-P9

BYW29EX-200,127

Mfr. #:
Buy BYW29EX-200,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers TO-220 REC-EPI
Lifecycle:
New from this manufacturer.
Delivery:
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