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U290-E3

P1-P3P4-P5
U290/291
Vishay Siliconix
Document Number: 70235
S-41139—Rev. A, 07-Jun-04
www.vishay.com
1
N-Channel JFETs
PRODUCT SUMMARY
Part Number V
GS(off)
(V)
r
DS(on)
Max ()
I
D(off)
Typ (pA) t
ON
Typ (ns)
U290 −4.0 to −10 3 10 14
U291 −1.5 to −4.5 7 10 14
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: U290 < 3
D Fast Switching—t
ON
: 14 ns
D High Off-Isolation
D Low Capacitance: 20 pF
D Low Insertion Loss
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response
D Eliminates Additional Buffering
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
DESCRIPTION
The U290/U291 are high-performance JFET analog switches
designed to offer low on-resistance and fast switching. This
series features the lowest on-resistance of any JFET in the
industry today.
TheTO-206AC (TO-52) hermetically sealed case makes this
series suitable for military applications.
For similar products in TO-226A (TO-92) packaging, see the
J105/106/107 data sheet.
Top View
U290
U291
G and Case
TO-206AC
(TO-52)
D
S
1
23
Ordering Information: U290—E3
U291—E3
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage −30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 100 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature −65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature −55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation
a
500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 4 mW/_C above 25_C
U290/291
Vishay Siliconix
www.vishay.com
2
Document Number: 70235
S-41139—Rev. A, 07-Jun-04
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
U290 U291
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage V
(BR)GSS
I
G
= −1 A , V
DS
= 0 V
−35 −30 −30
V
Gate-Source Cutoff Voltage V
GS(off)
V
DS
= 15 V, I
D
= 3 nA −4.0 −10 −1.5 −4.5
V
Saturation Drain Current
b
I
DSS
V
DS
= 10 V, V
GS
= 0 V 500 200 mA
Gate Reverse Current
I
GSS
V
GS
= −15 V, V
DS
= 0 V −0.02 −1 −1 nA
Gate Reverse Current I
GSS
T
A
= 125_C
−0.01 −1 −1
A
Gate Operating Current
b
I
G
V
DG
= 10 V, I
D
= 25 mA −0.01
nA
Drain Cutoff Current
I
D( ff)
V
DS
= 5 V, V
GS
= −10 V 0.01 1 1
nA
Drain Cutoff Current I
D(off)
T
A
= 125_C
−0.005 1 1
A
Drain-Source On-Resistance r
DS(on)
V
GS
= 0 V, I
D
= 1 mA 3 7
Gate-Source Forward Voltage V
GS(F)
I
G
= 1 mA , V
DS
= 0 V 0.7 V
Dynamic
Common-Source Forward Transconductance
b
g
fs
V
DS
= 10 V I
D
= 25 mA f = 1 kHz
55
mS
Common-Source Output Conductance
b
g
os
V
DS
= 10 V, I
D
= 25 mA, f = 1 kHz
5
mS
Drain-Source On-Resistance r
ds(on)
V
GS
= 0 V, I
D
= 1 mA, f = 1 kHz 3 7
Common-Source Input Capacitance C
iss
V
DS
= 0 V, V
GS
= 0 V, f = 1 MHz 120 160 160
pF
Common-Source Reverse Transfer Capacitance C
rss
V
DS
= 0 V, V
GS
= −15 V, f = 1 MHz 20 30 30
pF
Equivalent Input Noise Voltage e
n
V
DG
= 10 V, I
D
= 25 mA, f = 1 kHz 3 nV⁄√Hz
Switching
Turn On Time
t
d(on)
6 15 15
Turn-On Time
t
r
V
DD
= 1.5 V, V
GS
(
H
)
= 0 V
8 20 20
ns
Turn
-
Off Time
t
d(off)
V
DD
= 1
.
5 V
,
V
GS(H)
= 0 V
See Switching Diagram
5 15 15
ns
T
urn-
Off Ti
me
t
f
9 20 20
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NVA
b. Pulse test: PW v300 s duty cycle v3%.
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
10
0 −6 −8 −10−2
8
4
2
0
20
16
8
4
0
10 100 1000
2 .0
1.6
0
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
On-Resistance vs. Drain Current
V
GS(off)
− Gate-Source Cutoff Voltage (V) I
D
− Drain Current (mA)
r
DS
@ I
D
= 10 mA, V
GS
= 0 V
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
I
DSS
r
DS
T
A
= 25_C
V
GS(off)
= −3 V
−5 V
−8 V
6 1.2
0.8
0.4
−4
12
r
DS(on)
− Drain-Source On-Resistance ( Ω )
r
DS(on)
− Drain-Source On-Resistance ( Ω )
I
DSS
− Saturation Drain Current (mA)
U290/291
Vishay Siliconix
Document Number: 70235
S-41139—Rev. A, 07-Jun-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
−55 25 125−15 85
500
68210
400
200
100
0
0 −8−4−2 −10
8
4
0
20
0304010 50
16
8
4
0
Turn-On Switching Turn-Off Switching
On-Resistance vs. Temperature Output Characteristics
T
A
− Temperature (_C)
V
DS
− Drain-Source Voltage (V)
V
GS(off)
− Gate-Source Cutoff Voltage (V) I
D
− Drain Current (mA)
I
D
= 10 mA
r
DS
changes X 0.7%/_C
t
r
approximately independent of I
D
V
DD
= 1.5 V, R
G
= 50
V
GS(L)
= −10 V
t
d(on)
@ I
D
= 10 mA
t
d(off)
V
GS(off)
= −8 V
V
GS(off)
= −3 V
t
d(off)
independent of device V
GS(off
)
V
DD
= 1.5 V, V
GS(L)
= −10 V
10
8
4
2
0
6
−35 5 45 65 105
300
4
−6
12
20
V
GS(off)
= −5 V
t
r
V
GS(off)
= −3 V
−5 V
−8 V
t
d(on)
@ I
D
= 30 mA
V
GS
= 0 V
−1.0 V
−0.5 V
−1.5 V
−2.0 V
−2.5 V
−3.0 V
t
f
Switching Time (ns)
Switching Time (ns)
I
D
− Drain Current (mA)
r
DS(on)
− Drain-Source On-Resistance ( Ω )
200
100
10
1
1 10 100
150
0 −12 −16−8−4 −20
120
90
60
30
0
Capacitance vs. Gate-Source Voltage Transconductance vs. Drain Current
V
GS
− Gate-Source Voltage (V) I
D
− Drain Current (mA)
V
DS
= 0 V
f = 1 MHz
C
iss
C
rss
V
DS
= 10 V
f = 1 kHz
T
A
= −55_C
125_C
25_C
V
GS(off)
= −5 V
C (pF)
g
fs
− Forward Transconductance (mS)
P1-P3P4-P5

U290-E3

Mfr. #:
Buy U290-E3
Manufacturer:
Vishay
Description:
JFET N-CH 30V 0.5W TO-206AC
Lifecycle:
New from this manufacturer.
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