2N4401RLRA Datasheet 2N4401RLRA, 2N4401G, 2N4401RLRPG | P1-P3

February, 2010 − Rev. 4

1 Publication Order Number:

2N4401/D

2N4401

General Purpose

Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage V

CEO

40 Vdc

Collector − Base Voltage V

CBO

60 Vdc

Emitter − Base Voltage V

EBO

6.0 Vdc

Collector Current − Continuous I

C

600 mAdc

Total Device Dissipation

@ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation

@ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to

+150

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient R

q

JA

200 °C/W

Thermal Resistance, Junction−to−Case R

q

JC

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

COLLECTOR

3

2

BASE

1

EMITTER

MARKING DIAGRAM

2N

4401

AYWW G

G

2N4401 = Device Code

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

1

2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 1

2N4401

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1) (I

C

= 1.0 mAdc, I

B

= 0) V

(BR)CEO

40 − Vdc

Collector−Base Breakdown Voltage (I

C

= 0.1 mAdc, I

E

= 0) V

(BR)CBO

60 − Vdc

Emitter−Base Breakdown Voltage (I

E

= 0.1 mAdc, I

C

= 0) V

(BR)EBO

6.0 − Vdc

Base Cutoff Current (V

CE

= 35 Vdc, V

EB

= 0.4 Vdc) I

BEV

− 0.1 mAdc

Collector Cutoff Current (V

CE

= 35 Vdc, V

EB

= 0.4 Vdc) I

CEX

− 0.1 mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I

C

= 0.1 mAdc, V

CE

= 1.0 Vdc)

(I

C

= 1.0 mAdc, V

CE

= 1.0 Vdc)

(I

C

= 10 mAdc, V

CE

= 1.0 Vdc)

(I

C

= 150 mAdc, V

CE

= 1.0 Vdc)

(I

C

= 500 mAdc, V

CE

= 2.0 Vdc)

h

FE

20

40

80

100

40

−

300

−

Collector−Emitter Saturation Voltage (I

C

= 150 mAdc, I

B

= 15 mAdc)

(I

C

= 500 mAdc, I

B

= 50 mAdc)

V

CE(sat)

−

0.4

0.75

Vdc

Base−Emitter Saturation Voltage (I

C

= 150 mAdc, I

B

= 15 mAdc)

(I

C

= 500 mAdc, I

B

= 50 mAdc)

V

BE(sat)

0.75

−

0.95

1.2

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (I

C

= 20 mAdc, V

CE

= 10 Vdc, f = 100 MHz) f

T

250 − MHz

Collector−Base Capacitance (V

CB

= 5.0 Vdc, I

E

= 0, f = 1.0 MHz) C

cb

− 6.5 pF

Emitter−Base Capacitance (V

EB

= 0.5 Vdc, I

C

= 0, f = 1.0 MHz) C

eb

− 30 pF

Input Impedance (I

C

= 1.0 mAdc, V

CE

= 10 Vdc, f = 1.0 kHz) h

ie

1.0 15 k W

Voltage Feedback Ratio (I

C

= 1.0 mAdc, V

CE

= 10 Vdc, f = 1.0 kHz) h

re

0.1 8.0 X 10

−4

Small−Signal Current Gain (I

C

= 1.0 mAdc, V

CE

= 10 Vdc, f = 1.0 kHz) h

fe

40 500 −

Output Admittance (I

C

= 1.0 mAdc, V

CE

= 10 Vdc, f = 1.0 kHz) h

oe

1.0 30 mmhos

SWITCHING CHARACTERISTICS

Delay Time

(V

CC

= 30 Vdc, V

BE

= 2.0 Vdc,

I

C

= 150 mAdc, I

B1

= 15 mAdc)

t

d

− 15 ns

Rise Time t

r

− 20 ns

Storage Time

(V

CC

= 30 Vdc, I

C

= 150 mAdc,

I

B1

= I

B2

= 15 mAdc)

t

s

− 225 ns

Fall Time t

f

− 30 ns

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

ORDERING INFORMATION

Device Package Shipping

†

2N4401 TO−92 5000 Units / Bulk

2N4401G TO−92

(Pb−Free)

5000 Units / Bulk

2N4401RLRA TO−92 2000 / Tape & Reel

2N4401RLRAG TO−92

(Pb−Free)

2000 / Tape & Reel

2N4401RLRMG TO−92

(Pb−Free)

2000 / Tape & Ammo Box

2N4401RLRP TO−92 2000 / Tape & Ammo Box

2N4401RLRPG TO−92

(Pb−Free)

2000 / Tape & Ammo Box

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

2N4401

http://onsemi.com

3

Figure 1. Turn−On Time Figure 2. Turn−Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Scope rise time < 4.0 ns

*Total shunt capacitance of test jig connectors, and oscilloscope

+16 V

-2.0 V

< 2.0 ns

0

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1.0 kW

+30 V

200 W

C

S

* < 10 pF

+16 V

-14 V

0

< 20 ns

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1.0 kW

+30 V

200 W

C

S

* < 10 pF

-4.0 V

Figure 3. Capacitances

REVERSE VOLTAGE (VOLTS)

7.0

10

20

30

5.0

Figure 4. Charge Data

I

C

, COLLECTOR CURRENT (mA)

0.1 2.0 5.0 10 20

2.0

30 50

CAPACITANCE (pF)

Q, CHARGE (nC)

3.0

2.0

3.0

5.0

7.0

10

1.0

10 20 50 70 100 200

0.1

300 500

0.7

0.5

V

CC

= 30 V

I

C

/I

B

= 10

C

obo

Q

T

Q

A

25°C 100°C

TRANSIENT CHARACTERISTICS

3.01.00.50.30.2

0.3

0.2

30

C

cb

Figure 5. Turn−On Time

I

C

, COLLECTOR CURRENT (mA)

20

30

50

5.0

10

7.0

Figure 6. Rise and Fall Times

I

C

, COLLECTOR CURRENT (mA)

t, TIME (ns)

70

100

10 20 50 70 100 200 300 50030

I

C

/I

B

= 10

t

r

@ V

CC

= 30 V

t

r

@ V

CC

= 10 V

t

d

@ V

EB

= 2.0 V

t

d

@ V

EB

= 0

20

30

50

5.0

10

7.0

70

100

10 20 50 70 100 200 300 50030

V

CC

= 30 V

I

C

/I

B

= 10

t

r

t

f

2N4401RLRA

2N4401RLRA

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