OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NTMFS4708NT3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 2
1 Publication Order Number:
NTMFS4708N/D
NTMFS4708N
Power MOSFET
30 V, 19 A, Single N-Channel, SOIC-8 FL
Features
•Fast Switching Times
•Low Gate Charge
•Low R
DS(on)
•Low Inductance SOIC-8 Package
•These are Pb-Free Devices
Applications
•Notebooks, Graphics Cards
•DC-DC Converters
•Synchronous Rectification
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain-to-Source Voltage V
DSS
30 V
Gate-to-Source Voltage V
GS
±20 V
Continuous Drain Current
(Note 1)
Steady
State
T
A
= 25°C
I
D
11.5
A
T
A
= 85°C 8.0
t ≤ 10 s T
A
= 25°C 19
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
2.2
W
t ≤ 10 s 6.25
Continuous Drain Current
(Note 2)
Steady
State
T
A
= 25°C
I
D
7.8
A
T
A
= 85°C 5.6
Power Dissipation
(Note 2)
T
A
= 25°C P
D
1.0 W
Pulsed Drain Current
t
p
≤ 10 ms
I
DM
58 A
Operating Junction and Storage Temperature T
J
,
T
STG
-55 to
150
°C
Source Current (Body Diode) I
S
6.25 A
Single Pulse Drain-to-Source Avalanche
Energy. V
DD
= 25 V, V
GS
= 10 V, I
PK
= 7.0 A,
L = 10 mH, R
G
= 25 W
E
AS
245 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction-to-Ambient – Steady State (Note 1)
R
q
JA
56.5
°C/W
Junction-to-Ambient – t ≤ 10 s (Note 1)
R
q
JA
20
Junction-to-Ambient – Steady State (Note 2)
R
q
JA
124
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq).
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4708NT1G SOIC-8 FL
(Pb-Free)
1500/Tape & Reel
SOIC-8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
1
4708N = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
4708N
AYWWG
G
S
N-Channel
D
S
G
30 V
10.1 mW @ 4.5 V
7.3 mW @ 10 V
R
DS(on)
Typ
19 A
I
D
MaxV
(BR)DSS
S
S
G
D
D
D
D
NTMFS4708NT3G 5000/Tape & ReelSOIC-8 FL
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
NTMFS4708N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
10 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 24 V
T
J
= 25°C 1.0 mA
T
J
= 125°C 50
Gate-to-Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 2.5 V
Negative Threshold
Temperature Coefficient
V
GS(TH)
/T
J
5.0 mV/°C
Drain-to-Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 11.5 A 7.3 10 mW
V
GS
= 4.5 V, I
D
= 9.5 A 10.1 14
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 11.5 A 23 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 24 V
970
pF
Output Capacitance C
OSS
440
Reverse Transfer Capacitance C
RSS
115
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 11.5 A
10 15
nC
Threshold Gate Charge Q
G(TH)
1.3
Gate-to-Source Charge Q
GS
2.6
Gate-to-Drain Charge Q
GD
4.8
Gate Resistance R
G
1.95
W
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time t
d(on)
V
GS
= 10 V, V
DD
= 15 V, I
D
= 1.0 A,
R
G
= 3.0 W
6.7
ns
Rise Time t
r
4.3
Turn-Off Delay Time t
d(off)
20
Fall Time t
f
16
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V, I
S
= 6.25 A
T
J
= 25°C 0.78 1.0
V
T
J
= 125°C 0.60
Reverse Recovery Time t
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 6.25 A
32
ns
Charge Time t
a
15.5
Discharge Time t
b
16.5
Reverse Recovery Charge Q
RR
24 nC
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMFS4708N
http://onsemi.com
3
0
5
10
15
20
25
30
012345
V
GS
= 3 V
2.8 V
2.6 V
2.4 V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
3.4 V
3.8 V to 4.5
10 V
Figure 1. On-Region Characteristics
0
6
12
18
24
30
36
42
012345
T
J
= 125°C
T
J
= -55°C
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
V
DS
= 10 V
0
0.005
0.01
0.015
0.02
0 5 10 15 20 25 30
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
I
D
, DRAIN CURRENT (A)
Figure 3. On-Resistance versus Drain Current
and Temperature
T = 125°C
T = -55°C
T = 25°C
V
GS
= 10 V
0.002
0.006
0.01
0.014
0.018
4 8 12 16 20 24
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
V
GS
= 4.5 V
V
GS
= 10 V
T
J
= 25°C
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
I
D
, DRAIN CURRENT (A)
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
T
J
, TEMPERATURE (°C)
Figure 5. On-Resistance Variation with
Temperature
I
D
= 9 A
V
GS
= 10 V
100
1000
10000
100000
0 5 10 15 20 25 30
V
GS
= 0 V
T
J
= 125°C
T
J
= 150°C
I
DSS
, LEAKAGE (nA)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6. Drain-to-Source Leakage Current
versus Voltage
P1-P3P4-P5

NTMFS4708NT3G

Mfr. #:
Buy NTMFS4708NT3G
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 7.8A SO8FL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet