ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP.(3) MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
20 V
I
D
=250µA, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
1
µA
V
DS
=20V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA
V
GS
=± 12V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
0.7 V
I
D
=250µA, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.18
0.24
Ω
Ω
V
GS
=4.5V, I
D
=0.93A
V
GS
=2.7V, I
D
=0.47A
Forward Transconductance (3) g
fs
1.3 S V
DS
=10V,I
D
=0.47A
DYNAMIC (3)
Input Capacitance C
iss
160 pF
V
DS
=15 V, V
GS
=0V,
f=1MHz
Output Capacitance C
oss
50 pF
Reverse Transfer Capacitance C
rss
30 pF
SWITCHING(2) (3)
Turn-On Delay Time t
d(on)
2.4 ns
V
DD
=10V, I
D
=0.93A
R
G
=6.2Ω, R
D
=11Ω
(refer to test
circuit)
Rise Time t
r
4.2 ns
Turn-Off Delay Time t
d(off)
7.8 ns
Fall Time t
f
4.2 ns
Total Gate Charge Q
g
3.4 nC
V
DS
=16V,V
GS
=4.5V,
I
D
=0.93A
(refer to test
circuit)
Gate-Source Charge Q
gs
0.41 nC
Gate-Drain Charge Q
gd
0.8 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
0.95 V T
J
=25°C, I
S
=0.93A,
V
GS
=0V
Reverse Recovery Time (3) t
rr
12.9 ns T
J
=25°C, I
F
=0.93A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Q
rr
5.2 nC
NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
4
ZXM61N02F
ISSUE 1 - JUNE 2004
