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NJG1516R-TE1

P1-P3P4-P6P7-P9P10-P12P13-P14
NJG1516R
- 1 -
SPDT SWITCH GaAs MMIC
QGENERAL DESCRIPTION QPACKAGE OUTLINE
NJG1516R is a GaAs SPDT switch IC suited for antenna
switch of cellular phone handset.
This switch features low loss, high isolation at high power,
and exhibits wide operating frequency range from 1MHz to
3GHz at low voltage of 2.7V.
QFEATURES
OSingle, low voltage control +2.7V min.
OHandling power 36dBm typ.@f=2GHz, V
CTL
=3.0V
OLow insertion loss 0.4dB typ. @f=1GHz, P
in
=31dBm, V
CTL
=3V
0.4dB typ. @f=1GHz, P
in
=34.5dBm, V
CTL
=3.5V
0.55dB typ. @f=2GHz, P
in
=31.5dBm, V
CTL
=3V
OHigh isolation 27dB typ.@f=1GHz, P
in
=34.5dBm, V
CTL
=3.0V
25dB typ.@f=2GHz, P
in
=31.5dBm, V
CTL
=3.0V
OLow current consumption 38uA typ.@f=2GHz, P
in
=34.5dBm, V
CTL
=3.0V
OVery small package VSP8 (Mount Size: 4.0x2.9x1.2mm)
QPIN CONFIGURATION
QTRUTH TABLE
NJG1516R
“H”=V
CTL
(
H
)
,“L”=V
CTL
(
L
)
V
CTL1
H
L
V
CTL2
L
H
PC
-
P1
ON
OFF
PC
-
P2
OFF
ON
Pin Connection
1.VCTL2
2.PC
3.GND
4.VCTL1
5.P1
6.GND
7.GND
8.P2
R TYPE
(Top View)
6
7
8
1
2
3
4 5
NJG1516R
- 2-
QABSOLUTE MAXIMUM RATINGS
(T
a
=25°C)
PARAMETER SYMBOL CONDITIONS RATINGS UNITS
Input Power P
in
V
CTL(L)
=0V, V
CTL(H)
=3.0V 38 dBm
Control Voltage V
CTL
V
CTL(H)
-V
CTL(L)
12 V
Power Dissipation P
D
320 mW
Operating Temp. T
opr
-40~+85 °C
Storage Temp. T
stg
-55~+125 °C
QELECTRICAL CHARACTERISTICS
(V
CTL (L)
=0V, V
CTL (H)
=3V, Z
S
=Z
l
=50Ω, T
a
=25°C)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating Voltage (LOW)
V
CTL(L)
-0.2 0 0.2 V
Operating Voltage (HIGH)
V
CTL(H)
f=1GHz, P
in
=34.5dBm 2.7 3.0 9.0 V
Control Current I
CTL
f=1GHz, P
in
=34.5dBm - 38 55 uA
Insertion Loss 1 LOSS1 f=1GHz, P
in
=31dBm - 0.4 0.5 dB
Insertion Loss 2 LOSS2
f=1GHz, P
in
=34.5dBm
V
CTL(H)
=3.5V, V
CTL(L)
=0V
- 0.4 0.5 dB
Insertion Loss 3 LOSS3 f=1GHz, P
in
=34.5dBm - 0.4 0.6 dB
Insertion Loss 4 LOSS4 f=2GHz, P
in
=31.5dBm - 0.55 0.8 dB
Isolation 1
(PC-P1, PC-P2)
ISL1 f=1GHz, P
in
=34.5dBm 26 27 - dB
Isolation 2
(PC-P1, PC-P2)
ISL2 f=2GHz, P
in
=31.5dBm 22 25 - dB
Maximum Input Power 1
*1
P
in1
V
CTL(H)
=2.7V, f=2GHz
- - 33.5 dBm
Maximum Input Power 2
*1
P
in2
V
CTL(H)
=3V, f=2GHz
- - 34 dBm
Maximum Input Power 3
*1
P
in3
V
CTL(H)
=4V, f=2GHz
- - 37 dBm
Maximum Input Power 4
*1
P
in4
V
CTL(H)
=6V, f=2GHz
- - 38 dBm
Maximum Input Power 5
*1
P
in5
V
CTL(H)
=9V, f=2GHz
- - 34.5 dBm
Pout at 0.2dB Gain
Compression point
P
-0.2dB
1 f=2GHz
34.5 36 - dBm
VSWR 1 (PC, P1, P2) VSWR
f=0.05~2.5GHz,
ON State
- 1.45 1.55
Switching Time T
SW
f=0.05~2.5GHz - 70 - ns
*1: Maximum Input Power: This value is defined as maximum input power of linear
operating region or damage free operating region.
NJG1516R
- 3 -
QELECTRICAL CHARACTERISTICS (Cellular Band)
(V
CTL (L)
=0V, V
CTL (H)
=2.7V, Z
s
=Z
l
=50Ω, T
a
=25°C)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Frequency range
f
in
800 - 1000 MHz
Control voltage (HIGH)
V
CTL(H)
P
in
=25dBm 2.7 - 9 V
Insertion Loss 5
LOSS5 P
in
=25dBm - 0.4 0.5 dB
Isolation 3
(PC-P1, PC-P2)
ISL3 P
in
=25dBm 26 27 - dB
Pout at 0.2dB Gain
Compression point 2
P
-0.2dB
2 33.5 35 - dBm
Input 3rd Order
Intercept Point 1
IIP3(1)
f=900+901MHz, P
in
=25dBm,
V
CTL(H)
=3V, V
CTL(L)
=0V
*2
- 62 - dBm
Input 3rd Order
Intercept Point 2
IIP3(2)
f=900+901MHz, P
in
=25dBm
V
CTL(H)
=2.7V, V
CTL(L)
=0V
*2
- 60 - dBm
Second Harmonics 2fo
f=900MHz, P
in
=25dBm
2nd Harmonics of Input Signal
= -83dBc
-80 - dBc
Third Harmonics 3fo
f=900MHz, P
in
=25dBm
3rd Harmonics of Input Signal
=-100dBc
- -70 - dBc
VSWR 2 (PC, P1, P2) VSWR2 ON State - 1.15 1.25
*2: The input IP3 is defined as following equation.
IIP3 = (3 x Pout – IM3) / 2 + LOSS
P1-P3P4-P6P7-P9P10-P12P13-P14

NJG1516R-TE1

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IC RF SWITCH SPDT 3GHZ 8VSP
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