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IXGH40N120C3

P1-P3P4-P6
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH40N120C3
IXYS REF: G_40N120C3(6N)6-03-08
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
0 102030405060708090100
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
80
90
200 400 600 800 1000 1200
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 3Ω
dV / dt < 10V / ns
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 40A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
© 2008 IXYS CORPORATION, All rights reserved
IXGH40N120C3
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
0
1
2
3
4
5
6
2 6 10 14 18 22 26 30
R
G
- Ohms
E
off
- MilliJoules
3
4
5
6
7
8
9
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 60A
I
C
= 30A
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
0
50
100
150
200
250
300
350
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
-
Nanoseconds
120
130
140
150
160
170
180
190
t
d(off)
-
Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 60A
I
C
= 30A
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
0
50
100
150
200
250
300
350
400
450
4 6 8 1012141618202224262830
R
G
- Ohms
t
f
- Nanoseconds
0
100
200
300
400
500
600
700
800
900
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 60A
I
C
= 30A
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
E
off
- MilliJoules
0
1
2
3
4
5
6
7
8
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 3
Ω
,
V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
1
2
3
4
5
6
7
8
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 3Ω
,
V
GE
= 15V
V
CE
= 600V
I
C
= 60A
I
C
= 30A
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
0
50
100
150
200
250
300
350
400
450
500
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
f
- Nanoseconds
110
120
130
140
150
160
170
180
190
200
210
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH40N120C3
IXYS REF: G_40N120C3(6N)6-03-08
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
0
10
20
30
40
50
60
70
80
90
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
r
- Nanoseconds
14
15
16
17
18
19
20
21
22
23
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 3Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC, 25ºC
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
20
30
40
50
60
70
80
90
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
15
16
17
18
19
20
21
22
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 3Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 30A
I
C
= 60A
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
160
180
2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
R
G
- Ohms
t
r
- Nanoseconds
15
20
25
30
35
40
45
50
55
60
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 30A
I
C
= 60A
P1-P3P4-P6

IXGH40N120C3

Mfr. #:
Buy IXGH40N120C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors 75Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
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