NXP Semiconductors Product specification
Dual rectifier diodes BYV44 series
ultrafast
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage I
F
= 15 A; T
j
= 150˚C - 0.95 1.12 V
I
F
= 15 A - 1.08 1.25 V
I
F
= 30 A - 1.15 1.36 V
I
R
Reverse current V
R
= V
RRM
-1050µA
V
R
= V
RRM
; T
j
= 100 ˚C - 0.3 0.8 mA
Q
s
Reverse recovery charge I
F
= 2 A to V
R
≥ 30 V; - 40 60 nC
dI
F
/dt = 20 A/µs
t
rr
Reverse recovery time I
F
= 1 A to V
R
≥ 30 V; - 50 60 ns
dI
F
/dt = 100 A/µs
I
rrm
Peak reverse recovery current I
F
= 10 A to V
R
≥ 30 V; - 4.2 5.2 A
dI
F
/dt = 50 A/µs; T
j
= 100˚C
V
fr
Forward recovery voltage I
F
= 10 A; dI
F
/dt = 10 A/µs - 2.5 - V
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square wave where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
0 5 10 15 20 25
0
5
10
15
20
25
30
D = 1.0
0.5
0.2
0.1
BYV44
Rs = 0.0137 Ohms
Vo = 0.8900 V
IF(AV) / A
PF / W
D =
t
p
t
p
T
T
t
I
Tmb(max) / C
150
138
126
114
102
90
88
time
time
V
F
V
fr
V
F
I
F
0 5 10 15
0
5
10
15
20
1.9
2.2
2.8
4
BYV44
IF(AV) / A
PF / W
a = 1.57
Rs = 0.0137
Vo = 0.89
Tmb(max) / C
150
138
126
114
102
October 1998 2 Rev 1.400
