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IXTH140N075L2

P1-P3P4-P6
© 2017 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25C to 150C75 V
V
DGR
T
J
= 25C to 150C, R
GS
= 1M 75 V
V
GSS
Continuous 20 V
V
GSM
Transient 30 V
I
D25
T
C
= 25C 140 A
I
DM
T
C
= 25C, Pulse Width Limited by T
JM
500 A
I
A
T
C
= 25C 140 A
E
AS
T
C
= 25C 1.5 J
P
D
T
C
= 25C 540 W
T
J
-55...+150 C
T
JM
150 C
T
stg
-55...+150 C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
M
d
Mounting Torque (TO-247) 1.13/10 Nm/lb.in
Weight TO-268HV 4 g
TO-247 6 g
LinearL2
TM
Power
MOSFET w/Extended
FBSOA
IXTT140N075L2HV
IXTH140N075L2
N-Channel Enhancement Mode
Avalanche Rated
V
DSS
= 75V
I
D25
= 140A
R
DS(on)
< 11m
DS100774A(5/17)
Features
Designed for Linear Operation
International Standard Packages
AvalancheRated
Guaranteed FBSOA at 75C
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Solid State Circuit Breakers
Soft Start Controls
Linear Amplifiers
Programmable Loads
Current Regulators
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 75 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250μA 2.0 4.5 V
I
GSS
V
GS
= 20V, V
DS
= 0V 100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 5 A
T
J
= 125C 25 A
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 11 m
Preliminary Technical Information
TO-268HV (IXTT)
G
D (Tab)
S
TO-247 (IXTH)
G
S
D
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTT140N075L2HV
IXTH140N075L2
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 50 65 80 S
R
Gi
Gate Input Resistance 1.24
C
iss
9300 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 2190 pF
C
rss
750 pF
t
d(on)
26 ns
t
r
83 ns
t
d(off)
100 ns
t
f
33 ns
Q
g(on)
275 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
40 nC
Q
gd
108 nC
R
thJC
0.23 C/W
R
thCS
TO-247 0.21 C/W
Safe Operating Area Specification
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
SOA V
DS
= 75V, I
D
= 4.35A, T
C
= 75C, Tp = 5s 326 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 140 A
I
SM
Repetitive, pulse width limited by T
JM
560 A
V
SD
I
F
= 100A, V
GS
= 0V, Note 1 1.4 V
t
rr
200 ns
I
RM
14.0 A
Q
RM
1.4 μC
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note: 1. Pulse test, t 300s; duty cycle, d  2%.
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2 (External)
I
F
= 70A, -di/dt = 100A/s,
V
R
=
37.5V, V
GS
= 0V
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2017 IXYS CORPORATION, All rights reserved
IXTT140N075L2HV
IXTH140N075L2
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
20
40
60
80
100
120
140
0.0 0.5 1.0 1.5 2.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
12V
10V
9V
5V
6V
8V
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
100
200
300
400
500
600
700
0 2 4 6 8 10 12 14 16 18 20
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
7V
8V
9V
10V
12V
6V
5V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
20
40
60
80
100
120
140
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
12V
10V
9V
4V
6V
5V
7V
8V
Fig. 4. R
DS(on)
Normalized to I
D
= 70A Value vs.
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 140A
I
D
= 70A
Fig. 5. R
DS(on)
Normalized to I
D
= 70A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 100 200 300 400 500 600 700
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
20V
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
20
40
60
80
100
120
140
160
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
P1-P3P4-P6

IXTH140N075L2

Mfr. #:
Buy IXTH140N075L2
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules Disc Mosfet N-CH Linear L2 TO-247AD
Lifecycle:
New from this manufacturer.
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