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IRF7490TRPBF

P1-P3P4-P6P7-P9
Symbol Parameter Max. Units
V
DS
Drain-Source Voltage 100 V
V
GS
Gate-to-Source Voltage ± 20
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 5.4
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 4.3 A
I
DM
Pulsed Drain Current 43
P
D
@T
A
= 25°C Maximum Power Dissipation 2.5 W
P
D
@T
A
= 70°C Maximum Power Dissipation 1.6
Linear Derating Factor 20 mW/°C
T
J
Operating Junction and -55 to + 150 °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
www.irf.com 1
09/15/04
Symbol Parameter Typ. Max. Units
R
θJL
Junction-to-Drain Lead ––– 20
R
θJA
Junction-to-Ambient ––– 50 °C/W
Thermal Resistance
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
IRF7490PbF
HEXFET
®
Power MOSFET
Notes through are on page 9
PD - 95284
Absolute Maximum Ratings
V
DSS
R
DS(on)
max Q
g
100V 39mW@V
GS
=10V 37nC
l High frequency DC-DC converters
l Lead-Free
Benefits
Applications
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
IRF7490PbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
g
fs
Forward Transconductance 8.0 ––– ––– S V
DS
= 50V, I
D
= 3.2A
Q
g
Total Gate Charge ––– 37 56 I
D
= 3.2A
Q
gs
Gate-to-Source Charge ––– 8.0 nC V
DS
= 50V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 10 V
GS
= 10V,
t
d(on)
Turn-On Delay Time ––– 13 ––– V
DD
= 100V
t
r
Rise Time ––– 4.2 ––– I
D
= 3.2A
t
d(off)
Turn-Off Delay Time ––– 51 ––– R
G
= 9.1Ω
t
f
Fall Time ––– 11 ––– V
GS
= 10V
C
iss
Input Capacitance ––– 1720 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 220 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 25 ––– pF ƒ = 1.0MHz
C
oss
Output Capacitance ––– 1650 ––– V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
C
oss
Output Capacitance ––– 130 ––– V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
C
oss
eff. Effective Output Capacitance ––– 250 ––– V
GS
= 0V, V
DS
= 0V to 80V
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy ––– 91 mJ
I
AR
Avalanche Current ––– 3.2 A
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 3.2A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 67 100 ns T
J
= 25°C, I
F
= 3.2A
Q
rr
Reverse RecoveryCharge ––– 220 330 nC di/dt = 100A/µs
Diode Characteristics
2.3
43
A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
––– 0.11 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 33 39 mΩ V
GS
= 10V, I
D
= 3.2A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
––– ––– 20
µA
V
DS
= 100V, V
GS
= 0V
––– ––– 250 V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -200
nA
V
GS
= -20V
I
GSS
I
DSS
Drain-to-Source Leakage Current
IRF7490PbF
www.irf.com 3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
3.7V
20µs PULSE WIDTH
Tj = 25°C
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
3.7V
20µs PULSE WIDTH
Tj = 150°C
V
GS
TOP 15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
BOTTOM 3.7V
V
GS
TOP 15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
BOTTOM 3.7V
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 5.4A
V
GS
= 10V
3.0 4.0 5.0 6.0
V
GS
, Gate-to-Source Voltage (V)
0.01
0.10
1.00
10.00
100.00
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 50V
20µs PULSE WIDTH
P1-P3P4-P6P7-P9

IRF7490TRPBF

Mfr. #:
Buy IRF7490TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 100V 5.4A 39mOhm 37nC
Lifecycle:
New from this manufacturer.
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