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IRF7490PBF
P1-P3
P4-P6
P7-P9
IRF7490PbF
4
www.irf.com
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
1
10
100
V
DS
, D
r
ai
n-
to-
S
our
c
e
V
ol
tage (
V
)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Co
s
s
Cr
s
s
Ci
s
s
V
GS
= 0
V
,
f
= 1
M
H
Z
C
iss
=
C
gs
+ C
gd
, C
ds
SH
OR
TED
C
rss
= C
gd
C
os
s
= C
ds
+ C
gd
0
1
02
03
04
05
06
0
Q
G
T
otal
G
ate C
har
ge (
nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 80V
VD
S=
50
V
VD
S=
20
V
I
D
= 3.
2A
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, Sour
c
e-
toD
r
ai
n Vol
t
age (
V)
0.1
1.0
10.0
100.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150
°
C
V
GS
= 0V
1
10
100
1000
V
DS
,
Dr
ai
n-
toSour
c
e V
oltage (
V
)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
c
= 25°C
T
j
= 1
50°C
Sing
le
Pu
ls
e
1ms
ec
10ms
ec
O
P
E
R
ATIO
N IN
T
HIS A
REA
LIM
I
T
E
D BY
R
DS
(
on)
100µsec
IRF7490PbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10a.
Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS
t
d(on)
t
r
t
d(
off)
t
f
Fig 10b.
Switching Time Waveforms
V
DS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
1E
-
005
0.
0001
0.
001
0.
01
0.
1
1
10
100
t
1
, Rec
tangular
Pul
s
e Dur
at
i
on (
s
ec
)
0.
01
0.
1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SING
LE
P
ULSE
(
T
H
ER
M
AL
R
ESPO
N
SE )
25
50
75
100
125
150
T
C
, C
as
e T
emper
at
ure
(
°C)
0
1
2
3
4
5
6
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
IRF7490PbF
6
www.irf.com
Fig 13.
On-Resistance Vs. Gate Voltage
Fig 12.
On-Resistance Vs. Drain Current
Fig 14a&b.
Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b.
Unclamped Inductive Test circuit
and Waveforms
Fig 15c.
Maximum Avalanche Energy
Vs. Drain Current
D.U.T
.
V
D
S
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
Type
as
D.U.T
.
Current
Sampling
Resistors
+
-
V
GS
Q
G
Q
GS
Q
GD
V
G
Charge
t
p
V
(B
R)D
SS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.
T
L
V
DS
+
-
V
DD
DRIVE
R
A
15V
20V
0
1
02
03
04
05
0
I
D
, Dr
ai
n Cur
r
ent (
A)
0.030
0.035
0.040
0.045
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
V
GS
=
10V
4.
0
8.
0
12
.
0
16.
0
V
GS
,
G
at
e -t
o -
Sour
c
e V
ol
tage (
V)
0.
03
0.
04
0.
05
0.
06
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
I
D
= 3.
2
A
25
50
75
100
125
150
S
tar
ti
ng T
J
, J
unc
ti
on T
emper
at
ure
(
°C)
0
40
80
120
160
200
240
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
1.4A
2.
6
A
B
OTTOM
3.2A
P1-P3
P4-P6
P7-P9
IRF7490PBF
Mfr. #:
Buy IRF7490PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 5.4A 8-SOIC
Lifecycle:
New from this manufacturer.
Delivery:
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Ups
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EMS
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