MRF6S24140HR3 MRF6S24140HSR3
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 2450 MHz
G
ps
, POWER GAIN (dB)
5001
0
50
G
ps
P
out
, OUTPUT POWER (WATTS) CW
Figure 3. Power Gain and Drain Efficiency
versus CW Output Power as a Function of V
DD
I
DQ
= 1200 mA
f = 2450 MHz
V
DD
=28V
10010
40
30
20
10
11
16
15
14
13
12
D
, DRAIN EFFICIENCY (%)
D
32 V
30 V
32 V
30 V
28 V
G
ps
, POWER GAIN (dB)
1
0
60
G
ps
P
out
, OUTPUT POWER (WATTS) CW
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
=32V
I
DQ
= 1200 mA
f = 2450 MHz
100
40
30
20
11.5
14.5
14
13
12
D
, DRAIN EFFICIENCY (%)
D
13.5
12.5
50
10
10
G
ps
P
out
, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain and Drain Efficiency versus
CW Output Power as a Function of Total I
DQ
V
DD
=28V
f = 2450 MHz
1400 mA
10
15
13
12
11
G
ps
, POWER GAIN (dB)
1 10010
14
1000 mA
1300 mA
1200 mA
1100 mA
300
