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MRF6S24140HSR3

P1-P3P4-P6P7-P9P10-P12
MRF6S24140HR3 MRF6S24140HSR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for large--signal output applications at 2450 MHz. Devices
are suitable for use in industrial, medical and scientific applications.
Typical CW Performance at 2450 MHz, V
DD
=28Volts,I
DQ
= 1200 mA,
P
out
= 140 Watts
Power Gain — 13.2 dB
Drain Efficiency — 45%
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +68 Vdc
Gate--Source Voltage V
GS
--0.5, +12 Vdc
Storage Temperature Range T
stg
-- 65 to +150 C
Case Operating Temperature T
C
150 C
Operating Junction Temperature
(1,2)
T
J
225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 82C, 140 W CW
Case Temperature 75C, 28 W CW
R
JC
0.29
0.33
C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6S24140H
Rev. 4, 2/2012
Freescale Semiconductor
Technical Data
MRF6S24140HR3
MRF6S24140HSR3
2450 MHz, 140 W, 28 V
CW
LATERAL N-- CHANNEL
RF POWER MOSFETs
CASE 465C--03
NI--880S
MRF6S24140HSR3
CASE 465B--04
NI--880
MRF6S24140HR3
Freescale Semiconductor, Inc., 2007--2010, 2012.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MRF6S24140HR3 MRF6S24140HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (T
A
=25C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
=68Vdc,V
GS
=0Vdc)
I
DSS
— — 10 Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
=28Vdc,V
GS
=0Vdc)
I
DSS
— — 1 Adc
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 500 nAdc
On Characteristics
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 300 Adc)
V
GS(th)
1 2 3 Vdc
Gate Quiescent Voltage
(V
DD
=28Vdc,I
D
= 1300 mAdc, Measured in Functional Test)
V
GS(Q)
2 2.8 4 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=3Adc)
V
DS(on)
0.1 0.21 0.3 Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
=28Vdc 30 mV(rms)ac @ 1 MHz, V
GS
=0Vdc)
C
rss
— 2 — pF
Functional Tests (In Freescale Test Fifxture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 1300 mA, P
out
= 28 W Avg., f = 2390 MHz, 2--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in
3.84 MHz Bandwidth @ 10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
ps
13 15.2 17 dB
Drain Efficiency
D
23 25 — %
Intermodulation Distortion IM3 — -- 3 7 -- 3 5 dBc
Adjacent Channel Power Ratio ACPR — -- 4 0 -- 3 8 dBc
Input Return Loss IRL — -- 1 5 — dB
1. Part internally matched both on input and output.
MRF6S24140HR3 MRF6S24140HSR3
3
RF Device Data
Freescale Semiconductor, Inc.
Figure 1. MRF6S24140HR3(SR3) Test Circuit Schematic — 2450 MHz
Z9 0.193 x 1.170 Microstrip
Z10 0.115 x 0.550 Microstrip
Z11 0.250 x0.110 Microstrip
Z12 0.538 x 0.068 Microstrip
Z13 0.957 x 0.068 Microstrip
Z14, Z15 0.673 x 0.095 Microstrip
PCB Taconic RF--35, 0.030,
r
=3.5
Z1 0.678 x 0.068 Microstrip
Z2 0.466 x 0.068 Microstrip
Z3 0.785 x 0.200 Microstrip
Z4 0.200 x 0.530 Microstrip
Z5 0.025 x 0.530 Microstrip
Z6, Z7 0.178 x 0.050 Microstrip
Z8 0.097 x 1.170 Microstrip
Z1
RF
INPUT
C1
Z2 Z3 Z4 Z5
DUT
Z8
C2
RF
OUTPUT
Z9
Z10 Z11 Z12 Z13
C7
B1
V
BIAS
V
SUPPLY
C9
+
C10
+
R1
C3
Z6
Z7
C4
B2
C13
+
C14
+
C11
C19 C20C6
C21
C22
+
Z14
C15 C16C5
C17
C18
+
Z15
C8
C12
Table 5. MRF6S24140HR3(SR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1, B2 47 , 100 MHz Short Ferrite Beads, Surface Mount 2743019447 Fair--Rite
C1, C2, C3, C4, C5, C6 5.6 pF Chip Capacitors ATC600B5R6BT500XT ATC
C7, C11 0.01 F, 100 V Chip Capacitors C1825C103J1RAC Kemet
C8, C12, C15, C19 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet
C9, C13 22 F, 25 V Tantalum Capacitors T491D226M025AT Kemet
C10, C14 47 F, 16 V Tantalum Capacitors T491D476K016AT Kemet
C16, C17, C20, C21 10 F, 50 V Chip Capacitors GRM55DR61H106KA88B Murata
C18, C22 220 F, 50 V Electrolytic Capacitors 2222--150--95102 Vishay
R1 240 , 1/4 W Chip Resistor CRC12062400FKEA Vishay
P1-P3P4-P6P7-P9P10-P12

MRF6S24140HSR3

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NXP / Freescale
Description:
RF MOSFET Transistors 2.4GHZ HV6 28W
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